Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces |
| |
| Authors: | C Fulk R Sporken J Dumont D Zavitz M Trenary B Gupta G Brill J Dinan S Sivananthan |
| |
| Affiliation: | (1) Department of Physics, University of Illinois at Chicago, 60607 Chicago, IL;(2) Department of Chemistry, University of Illinois at Chicago, USA;(3) Laboratoire de Physique des Matériaux Electroniques, Facultés Universitaires Notre-Dame de la Paix, USA;(4) U.S. Army Research Laboratory, Adelphi, MD;(5) U.S. Army RDECOM CERDEC NVESD, Fort Beflore, VA |
| |
| Abstract: | We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron
spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations.
It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311)
had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy,
while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge
site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging
atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites.
This would ensure a nonpolar, B-face growth. |
| |
| Keywords: | Molecular beam epitaxy (MBE) arsenic (As) Si(311) Si(211) x-ray photoelectron spectroscopy (XPS) low energy electron diffraction (LEED) tellurium (Te) |
| 本文献已被 SpringerLink 等数据库收录！ |
|
