磁过滤阴极弧法制备CrCN薄膜结构与组分研究

目的通过磁过滤阴极弧沉积技术制备质量优异的CrCN涂层。研究乙炔/氮气混合气体流量以及基底偏压对薄膜结构和成分的影响。方法采用磁过滤真空阴极弧沉积技术,在20~100 m L/min变化的乙炔/氮气混合气体流量参数下沉积CrCN复合薄膜。通过X射线衍射、场发射电子显微镜、扫描探针显微镜、X射线光电子能谱仪、透射电镜,对薄膜的物相结构和形貌进行分析。结果随着气体流量的增加,CrCN复合薄膜的晶粒逐渐减小最终向非晶化转变。TEM结果表明,在CrCN复合薄膜中有大量几纳米到十几纳米的纳米晶浸没在非晶成分中。SPM表明,随着基底偏压由–200 V增大到–150 V,CrCN薄膜的表面粗糙度Sa由0.345 nm上升至4.38 nm。XPS、TEM和XRD数据表明,薄膜中Cr元素主要以单质Cr、Cr N以及Cr3C2的形式存在。结论采用磁过滤真空阴极弧沉积技术制备的CrCN复合薄膜具有纳米晶-非晶镶嵌结构。该方法沉积的CrCN薄膜的表面粗糙度与基底负偏压有关。混合气体的流量变化对薄膜组分的变化几乎无影响。

Structure and Composition Investigation of CrCN Films Prepared by Fil-tered Cathodic Vacuum Arc Technique

CrCN composite films were deposited on Si(111) substrates by filtered cathodic vacuum arc deposition(FCVAD) technique using C₂H₂ and N₂ as the precursor. The composition and structure have been investigated by X-ray diffraction(XRD), field emission scanning electronic microscope(FESEM), transmission electron microscope(TEM),scanning probe microscope(SPM),X-ray photoelectron spectroscopy(XPS) and Raman spectrometer. The results suggest that the amorphous degree of the thin films increases gradually with the increasing gas flow rate; TEM shows that there are a large number of nano-crystalline immersion in amorphous components in the CrCN composite films; SPM shows that the surface roughness of CrCN thin films increased from 0.345nm to 4.38nm with the increase of substrate bias from -200V to -150V; XPS, TEM and XRD data show that the Cr element in the films mainly exists as pure Cr, CrN, Cr₃C₂.