| 复合布拉格反射镜高亮度AlGaInP发光二极管 |
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| 引用本文： | 于晓东,韩军,李建军,邓军,林委之,达小丽,陈依新,沈光地.复合布拉格反射镜高亮度AlGaInP发光二极管[J].半导体学报,2007,28(1):100-103. |
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| 作者姓名： | 于晓东 韩军 李建军 邓军 林委之 达小丽 陈依新 沈光地 |
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| 作者单位： | 北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022;北京工业大学光电子技术实验室,北京,100022 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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北京市属市管高等学校人才强教计划
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北京工业大学校科研和教改项目 |
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| 摘 要： | 采用光学薄膜理论中干涉矩阵模型计算了峰值波长为630nm的AlGaInP红光LED的Al0.6Ga0.4As/AlAs材料的常规DBR和复合DBR的反射谱特性,用LP-MOCVD方法生长了模拟设计的DBR结构,测量了其白光反射谱,实验与模拟结果基本符合.制备了采用Al0.6Ga0.4As/AlAs复合DBR的LED器件,未封装输出光功率为2.3mW,外量子效率为5.6%,发光效率可达12 lm/W,比常规DBR器件提高了35%.验证了复合DBR与常规DBR相比,可以大幅度提高AlGaInP红光LED的出光效率.
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| 关 键 词： | 红光LED 复合分布式布拉格反射镜 金属有机物化学气相淀积 光提取效率 |
| 文章编号： | 0253-4177(2007)01-0100-04 |
| 收稿时间： | 7/6/2006 12:00:00 AM |
| 修稿时间： | 07 6 2006 12:00AM |
High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector |
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| Yu Xiaodong,Han Jun,Li Jianjun,Deng Jun,Lin Weizhi,Da Xiaoli,Chen Yixin and Shen Guangdi.High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector[J].Chinese Journal of Semiconductors,2007,28(1):100-103. |
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| Authors: | Yu Xiaodong Han Jun Li Jianjun Deng Jun Lin Weizhi Da Xiaoli Chen Yixin and Shen Guangdi |
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| Affiliation: | Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China;Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China |
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| Abstract: | An Al0.6Ga0.4As/AlAs distributed Bragg reflector (DBR) for a 630nm peak wavelength high brightness AlGaInP LED is studied.The reflective characteristics of normal DBR and coupled DBR are simulated using the interference matrix model.The simulated DBR structures and corresponding LEDs are grown by LP-MOCVD.The simulated and experimental results both indicate that the coupled DBR can remarkably increase the light extraction efficiency of an AlGaInP LED.The non-encapsulated LED with the coupled DBR performs well,with 2.3mW output optical power,12 lm/W luminous efficiency,and 5.6% external quantum efficiency,with an improvement of 35% over that with a normal DBR. |
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| Keywords: | red LED coupled DBR MOCVD light extraction efficiency |
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