Investigation of temperature-dependent small-signal performances of TB SOI MOSFETs |
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Authors: | Yuping Huang Jun Liu Kai L Jing Chen |
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Affiliation: | Key Laboratory for RF Circuits and Systems(Hangzhou Dianzi University), Ministry of Education, Hangzhou 310018, China |
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Abstract: | This paper investigated the temperature dependence of the cryogenic small-signal ac performances of multi-finger partially depleted (PD) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs), with T-gate body contact (TB) structure. The measurement results show that the cut-off frequency increases from 78 GHz at 300 K to 120 GHz at 77 K and the maximum oscillation frequency increases from 54 GHz at 300 K to 80 GHz at 77 K, and these are mainly due to the effect of negative temperature dependence of threshold voltage and transconductance. By using a simple equivalent circuit model, the temperature-dependent small-signal parameters are discussed in detail. The understanding of cryogenic small-signal performance is beneficial to develop the PD SOI MOSFETs integrated circuits for ultra-low temperature applications. |
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Keywords: | cryogenic small-signal AC performance PD SOI MOSFETs |
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