Influence of Sb-doping on dielectric properties of NaCu3Ti3TaO12 ceramics and relevant mechanism(s) |
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| Affiliation: | 1. Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, PR China;2. College of Physics and Optoelectronics, Taiyuan University of Technology, Jinzhong 030600, PR China;3. Basic Courses, Shanxi Institute of Energy, Jinzhong 030600, PR China;1. Graduate School of Chemical Science and Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan;2. Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan;1. International and Inter University Centre for Nanoscience and Nanotechnology, Mahatma Gandhi University, Kottayam, India;2. International School of Photonics, Cochin University of Science and Technology, Kochi, India;3. School of Chemical Science, Mahatma Gandhi University, Kottayam, India;1. School of Material Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China;1. Ankara University, Department of Physics Engineering, 06100 Tandogan, Ankara, Turkey;2. Gazi University, Department of Physics, 06500 Teknikokullar, Ankara, Turkey;1. Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711103, India;2. Department of Applied Chemistry, Birla Institute of Technology, Mesra, Ranchi 835215, Jharkhand, India;3. Department of Organic Chemistry, University of Murcia, Campus de Espinardo, 30100 Murcia, Spain;4. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China;5. Department of Life Sciences, Graduate School of Arts and Sciences, The University of Tokyo, Tokyo 153-8902, Japan |
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| Abstract: | A series of NaCu3Ti3Ta1−xSbxO12 ceramics were prepared by the conventional solid-state reaction technique, and their dielectric properties, crystalline structures, microstructures and complex impedance were investigated systematically. All the ceramics show the main phases of perovskite-related crystallographic structure, and their dielectric properties change significantly with the increasing Sb-doping. All these ceramics exhibit giant dielectric-permittivity properties, and impedance spectroscopy analysis reveals that NaCu3Ti3Ta1−xSbxO12 ceramics are electrically heterogeneous and composed of insulating grain boundaries and semiconducting grains. Moreover, CuO secondary phase and Cu2+/Cu1+, Ti4+/Ti3+, Sb5+/Sb3+ and Ta5+/Ta3+ aliovalences are found to exist in NaCu3Ti3Ta1−xSbxO12 ceramics through XRD, EDS and XPS analysis. Therefore, CuO segregation and aliovalences of metal ions were suggested to contribute greatly to the internal barrier layer capacitance effect formation in NaCu3Ti3Ta1−xSbxO12 ceramics. Furthermore, Sb-doping could decrease the tanδ of NaCu3Ti3Ta1−xSbxO12 ceramics at low frequencies, and the reason was discussed. |
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| Keywords: | Dielectric properties Aliovalences IBLC |
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