直接栅MOSFET静电场传感器温度漂移模型和模拟

推导出了直接栅MOSFET静电场传感器的温度漂移系数,并研究了温度漂移的主要原因。此研究工作对消除直接栅MOSFET静电场传感器的温度漂移有一定的帮助。首先,建立了直接栅MOSFET静电场传感器沟道中电荷随温度变化的模型。其次,根据直接栅MOSFET沟道载流子浓度和载流子迁移率都为温度的函数,将直接栅MOSFET静电场传感器的温度漂移定义为由沟道载流子迁移率随温度变化引起的温度漂移系数αμ和由沟道载流子浓度随温度变化引起的温度漂移系数αQ,并对它们与温度的关系作了推导和研究。最后,对沟道载流子迁移率随温度变化引起的温度漂移系数αμ和由沟道载流子浓度随温度变化引起的温度漂移系数αQ进行了模拟和比较。模拟结果表明,温度漂移系数αμ远小于温度漂移系数αQ。因此沟道载流子浓度随温度变化是直接栅MOSFET静电场传感器的温度漂移的主要原因。

Temperature Drift Model and Simulation of the Direct Gate MOSFET Electrostatic Field Sensor

The temperature drift coefficient of the direct gate MOSFET electrostatic field sensor was deduced and the key reason of which was studied.The study is helpful to eliminate the temperature drift of the direct gate MOSFET electrostatic field sensor.Firstly,the charge variation model with the temperature in the channel of the direct gate MOSFET electrostatic field sensor was set up.Then,based on the carrier concentration and carrier mobility as the function of the temperature,the temperature drift of the direct gate MOSFET electrostatic field sensor was defined as the temperature drift coefficient αμ caused by the change of the carrier mobility with the temperature and the temperature drift coefficient αQ caused by the change of the carrier concentration with the temperature.And the relations between the temperature drift coefficients and the temperature were studied.Finally,the simulation results of the temperature drifts caused by the changes of the carrier mobility and carrier concentration were compared.The simulation results indicate that the temperature drift αμ caused by the change of the carrier mobility is much less than the temperature drift αQ caused by the change of the carrier concentration.Thus,the change of the carrier concentration in the channel should be the key reason of the temperature drift.