| SiN钝化前的NF3等离子体处理对AlGaN/GaN HEMT性能的影响 |
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| 引用本文： | 任春江,陈堂胜,焦刚,陈刚,薛舫时,陈辰.SiN钝化前的NF3等离子体处理对AlGaN/GaN HEMT性能的影响[J].半导体学报,2008,29(12):2385-2388. |
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| 作者姓名： | 任春江 陈堂胜 焦刚 陈刚 薛舫时 陈辰 |
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| 作者单位： | 南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016 |
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| 摘 要： | 研究了SiN钝化前利用感应耦合等离子体（ICP）对AlGaN/GaN HEMT表面进行NF3等离子体处理对器件性能的影响. 结果表明，运用低能量的NF3等离子体处理钝化前的AlGaN/GaN HEMT表面能有效抑制器件电流崩塌，而器件直流及微波小信号特性则未受影响. 微波功率测试表明，经过6min NF3等离子体处理的AlGaN/GaN HEMT在2GHz, 30V工作电压下达到6.15W/mm的输出功率密度，而未经过处理的器件只达到1.82W/mm的输出功率密度.
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| 关 键 词： | AlGaN/GaN 高电子迁移率晶体管 电流崩塌 NF3等离子体处理 |
| 收稿时间： | 6/11/2008 5:27:27 PM |
| 修稿时间： | 7/17/2008 1:39:51 PM |
Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs |
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| Ren Chunjiang,Chen Tangsheng,Jiao Gang,Chen Gang,Xue Fangshi and Chen Chen.Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J].Chinese Journal of Semiconductors,2008,29(12):2385-2388. |
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| Authors: | Ren Chunjiang Chen Tangsheng Jiao Gang Chen Gang Xue Fangshi and Chen Chen |
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| Affiliation: | National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China |
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| Abstract: | NF3 plasma surface treatment in inductively coupled plasma (ICP) system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied.The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated.The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm. |
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| Keywords: | AlGaN/GaN HEMT current collapse NF3 plasma treatment |
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