Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix |
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Authors: | A B Talochkin I B Chistokhin |
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Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia |
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Abstract: | Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the
Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed.
This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole
levels of pseudomorphic Ge quantum dots are well described by the simplest “quantum box” model using actual sizes of Ge islands.
The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters
of Si/Ge structures with Ge quantum dots is determined. |
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