Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method |
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| Authors: | I B Parfenteva B V Pugachev V F Pavlov Yu P Kozlova C N Knyazev T G Yugova |
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| Affiliation: | 1.State Institute of Rare Metals “Giredmet”,Moscow,Russia;2.Institute for Nuclear Research,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | The influence of the deviation of seed orientation from the 100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 104 cm–1 in low-angle boundaries to 6 × 104 cm–1 in subboundaries. |
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