| Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory |
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| 引用本文： | 赖云锋,冯洁,乔保卫,黄晓刚,蔡燕飞,林殷茵,汤庭鳌,蔡炳初,陈邦明.Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory[J].中国物理快报,2006,23(9):2516-2518. |
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| 作者姓名： | 赖云锋 冯洁 乔保卫 黄晓刚 蔡燕飞 林殷茵 汤庭鳌 蔡炳初 陈邦明 |
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| 作者单位： | [1]National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro and Nano Science and Techno]ogy, Shanghai Jiaotong University, Shanghai 200030 [2]State Key Laboratory of ASIC ＆ System, Pudan University, Shanghai 200433 [3]Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| 基金项目： | Supported by the Shanghai Science and Technology Committee under Grant No 0352nm011 and Silicon Storage Technology, Inc. USA. |
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| 摘 要： | The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.
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| 关 键 词： | 多重态储存能力 硫薄膜 相改变记忆 PCM 薄膜物理学 |
| 收稿时间： | 2006-01-18 |
| 修稿时间： | 2006-01-18 |
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