SiO2缓冲层对溶胶-凝胶法制备的SnO2∶Sb薄膜光电性能的影响

以SnCl2·2H2O和SbCl3为原料,利用溶胶-凝胶法制备了SnO2∶Sb薄膜。利用XRD观察了薄膜的结构特点,利用紫外可见分光光度计测量了薄膜的透过率,利用四探针测试系统表征了薄膜的电学性能。讨论了掺杂浓度以及SiO2缓冲层厚度对薄膜光电性能的影响。结果表明,随着掺杂浓度的增大,薄膜的电阻率先降低而后略有升高,当掺杂浓度为5%时,薄膜电阻率达到最小,为8.7×10-3Ω·cm;并深入研究了缓冲层对薄膜性能的改善作用:当掺杂浓度为5%时,随着缓冲层数的增加,薄膜方块电阻呈下降趋势,最小可达到95Ω/□,电阻率达到1.1×10-3Ω·cm。

Effect of SiO2 Buffer Layers on the Optical and Electrical Properties of Sb-doped SnO2 Thin Films by Sol-gel Process

The Sb-doped SnO2 thin films synthesized by a simple sol-gel method were investigated by means of X-ray diffractometer,visible spectrophotometer and 4-point probes resistivity measurements system.The samples were polycrystalline thin films with rutile structure of undoped SnO2.The results showed that the resistivities of the films decreased at first and then increased with increase of the doping concentration from 1% to 6%,and reached its minimum 8.7×10-3Ω·cm with the doping concentration of 5%.Further analysis indicated that with the increase of the thickness of the buffer layers,the square resistance of the thin films decreased and reached minimum 95Ω/□ and the resistivity reached 1.1×10-3Ω·cm with Sb-doped concentration of 5%.