PC1D方法对铝背场钝化技术的分析

降低单晶硅原材料成本，采用更薄的硅片作为太阳电池的原料是晶体硅太阳电池产业发展的趋势之一。对薄片化的太阳电池，铝背场的背表面钝化工艺显得愈加重要。采用PC1D太阳电池软件模拟的方法，对以商业用p型硅为衬底的单晶硅125×125太阳电池的铝背场的背表面钝化技术进行了模拟，分析得出，对一定厚度的电池片来说，尤其是当少数载流...

Analysis of Aluminum Back-Surface Field Passivation Technique by PC1D

In order to reduce the cost of silicon raw materials, thinner silicon wafers are used for crystalline silicon solar cells. Aluminum back-surface field passivation technique is more important for thinner solar cells. PC1D method is used to model the aluminum back-surface field passivation technique of p-type monocrystalline silicon substrate 125× 125 solar cells. The model results are analyzed. For a certain thickness solar cells, especially when the minority carrier diffusion length is greater than the thickness of silicon wafers, the back-surface recombination velocity is particularly important for efficiency. The efficiency will be increased with the increase of aluminum back-surface field junction depth, the decrease of back-surface recombination velocity and the increase of minority carrier lifetime. Aluminum back-surface field can improve the quality of the back-surface passivation, reduce the back-surface recombination velocity thus improve the efficiency of solar cells, which is commonly used for the commercial crystalline silicon solar cells.