砷化镓衬底加工技术研究及其新发展

第二代半导体砷化镓(GaAs)材料是衬底外延生长和器件制备的基础材料，其晶片表面要求超光滑、无表面/亚表面损伤和低的残余应力等，且其表面平坦化质量决定了后续外延层的质量，并最终影响相关器件的性能。通过归纳分析砷化镓单晶材料的本征特性及其切割、磨边、研磨、抛光等技术的研究进展，对砷化镓超光滑平坦化加工技术未来的研究方向进行展望。 

Research and new development of GaAs substrate fabrication technology

The second generation semiconductor material, gallium arsenide (GaAs), is widely used in the field of microelectronics and optoelectronic devices. It is used as the basic material for substrate epitaxial growth and device preparation. The surface integrity of GaAs wafer is required to have ultra-smooth surface and no surface/subsurface damage or residual stress. The surface flattening quality of GaAs wafer determines the subsequent epitaxial layer and ultimately affects the performance of related devices. By summarizing and analyzing the intrinsic characteristics of GaAs single crystal materials and the research progress of cutting, edge grinding, surface grinding and polishing technology, the future research direction of super smooth flattening processing technology of GaAs is prospected.