| 用于氦原子泵浦的1080nm半导体激光器 |
| |
| 引用本文： | 曹宏斌,毛庆丰,张道银.用于氦原子泵浦的1080nm半导体激光器[J].半导体光电,1999,20(6):390-392. |
| |
| 作者姓名： | 曹宏斌 毛庆丰 张道银 |
| |
| 作者单位： | 重庆光电技术研究所,重庆,400060 |
| |
| 摘 要： | ＩｎＧａＡｓ／ＧａＡｓ 应变量子结构半导体激光器有其特有的波长输出范围，介绍了１ ０８０ ｎｍ ＩｎＧａＡｓ／ＧａＡｓ 应变量子阱激光器的结构、典型的特性参数及其用途。
|
| 关 键 词： | 半导体激光器 应变量子阱结构 特性 |
1080 nm semiconductor laser for light source of He-pumping |
| |
| CAO Hong-bin,MAO Qing-feng,ZHANG Dao-yin.1080 nm semiconductor laser for light source of He-pumping[J].Semiconductor Optoelectronics,1999,20(6):390-392. |
| |
| Authors: | CAO Hong-bin MAO Qing-feng ZHANG Dao-yin |
| |
| Abstract: | InGaAs/GaAs strained quantum well laser has its own specific rang of wavelength.Its structure and typical characteristics as well as its applications are introduced. |
| |
| Keywords: | InGaAs/GaAs |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
