| 掺杂T型半导体量子线的量子限域效应与有效库仑作用 |
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| 引用本文： | 白凌志,王廷栋,刘月,程诚,张伟,怀平.掺杂T型半导体量子线的量子限域效应与有效库仑作用[J].核技术,2012(5):390-394. |
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| 作者姓名： | 白凌志 王廷栋 刘月 程诚 张伟 怀平 |
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| 作者单位： | 中国科学院上海应用物理研究所 |
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| 基金项目： | 国家973项目(2010CB934504);国家自然科学基金(10874197,10905040);中国科学院百人计划的资助 |
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| 摘 要： | 采用双带模型研究了掺杂半导体量子线中的量子限域效应及有效库仑作用。通过有限元方法数值求解复杂边界条件下薛定谔方程,获得了T型砷化镓量子线中载流子的单粒子波函数。载流子间的有效库仑作用通过包络函数近似获得。研究发现,重空穴量子限域效应强于电子,空穴间的有效库仑作用随控制电场增大,而电子间的有效库仑作用则减弱。电子与空穴间的有效库仑作用变化规律较为复杂,反映了电子与空穴的局域与离域性的相互竞争关系。
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| 关 键 词： | 半导体量子线 电荷掺杂 量子限域 有效库仑势 |
Quantum confinement effect and effective Coulomb interaction in doped T-shaped semiconductor quantum wire |
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| BAI Lingzhi,WANG Tingdong,LIU Yue,CHENG Cheng,ZHANG Wei,HUAI Ping.Quantum confinement effect and effective Coulomb interaction in doped T-shaped semiconductor quantum wire[J].Nuclear Techniques,2012(5):390-394. |
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| Authors: | BAI Lingzhi WANG Tingdong LIU Yue CHENG Cheng ZHANG Wei HUAI Ping |
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| Affiliation: | (Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China) |
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| Abstract: | In this paper,we study the quantum confinement effect and effective Coulomb interaction in doped semiconductor quantum wire based on a two-band model.Single particle wave-function of carriers in T-shaped GaAs quantum wire can be obtained by finite-element solution of Schr dinger equation with complex boundary condition.The effective Coulomb interactions are calculated by using envelop function approximation.Due to their heavier mass,the quantum confinement effect of heavy holes is stronger than the electrons.The effective h-h Coulomb interaction increases with the intensity of electric field,while e-e Coulomb interaction decreases with increasing intensity of electric field.The e-h Coulomb interaction shows complicated dependency on electric field,which indicates competition of localization and delocalization characters in electron and hole. |
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| Keywords: | Semiconductor quantum wire Charge doping Quantum confinement Effective coulomb potential |
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