Nucleation and growth of sputtered and evaporated trigonal selenium films

Critical nucleation temperature experiments, scanning electron microscopy and light microscopy were used to study the nucleation and growth of trigonal Se films deposited by evaporation and sputtering on both gold and anodized aluminum substrates. The major nucleation and growth processes were shown to be the condensation of Se₂ molecules followed by their polymerization into Se_n chains, where n can be very large. In sputtering, these chains have a higher surface mobility, due in part to their higher residual kinetic energy, and thus they can form large trigonal Se crystallites. The high incident kinetic energies also allow the Se to break through the surface contamination of the substrate. This is important since the Se chain mobility should also be dependent on the surface free energy and on the nucleation site density of the substrate. Very adherent large-grained trigonal Se films were grown by sputtering on Au substrates. It was shown that nucleation sites for the large trigonal Se crystallites were not created by the incident flux but are inherent on the substrate. The high energy incident flux did, however, increase nucleation probability for the initial Se₂ condensation. For sputtering on anodized aluminum substrates the combination of low surface energy and high nucleation site density decreased chain mobility and thus prevented formation of large crystallites.