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| NMOS管热载流子衰退效应评价模型及寿命预测方法研究 | |
| 引用本文： | 赵文彬, 陈慧蓉, 章晓文, 周川淼, 于宗光,.NMOS管热载流子衰退效应评价模型及寿命预测方法研究[J].电子器件,2008,31(5). |
| 作者姓名： | 赵文彬 陈慧蓉 章晓文 周川淼 于宗光 |
| 作者单位： | 1. 西安电子科技大学微电子学院,西安,710071;中电科技集团第58研究所,无锡,214035 2. 中电科技集团第58研究所,无锡,214035 3. 信息产业部电子第五研究所,广州,510610 |
| 摘 要： | 热载流子是器件可靠性研究的热点之一.特别对于亚微米器件,热载流子失效是器件失效的一个最主要方面.通过对这种失效机理及其失效模型的研究,为设计和工艺提供帮助,从而有效降低由热载流子引起的电路失效,提高电路可靠性.本文主要针对几种典型工艺的栅氧厚度(例如:Tox分别为150 (A)、200 (A)、250 (A))的NMOSFET进行加速应力实验,提取寿命模型的相关参数,估算这些器件在正常工作条件下的寿命值,对亚微米工艺器件寿命进行快速评价. |
| 关 键 词： | 热载流子效应 栅氧厚度 模型参数 寿命 |
Evaluating Model of Hot Carrier and Lifetime Estimating of NMOSFET |
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| ZHAO Wen-bin,CHEN Hui-rong,ZHANG Xiao-wen,ZHOU Chuan-miao,YU Zong-guang.Evaluating Model of Hot Carrier and Lifetime Estimating of NMOSFET[J].Journal of Electron Devices,2008,31(5). | |
| Authors: | ZHAO Wen-bin CHEN Hui-rong ZHANG Xiao-wen ZHOU Chuan-miao YU Zong-guang |
| Affiliation: | ZHAO Wen-bin1,CHEN Hui-rong2,ZHANG Xiao-wen3,ZHOU Chuan-miao2,YU Zong-guang21.Xidian University School of Microelectronics,Xi\'an 710071,China,2.The 58th Research Institute of CETC,Wuxi 214035,3.The Fifth Institute of Information Industry Ministry,Guangzhou 510610 |
| Abstract: | Hot-carrier is a hotspot in device reliability research.Hot-carrier mostly induced device degradation especially for sub-micron process.It is very useful for design and process manufacture by the researching of failure mechanism and model.In this paper,for different NMOSFET with different gate oxide thickness,we did accelerate stressing experiments at steady process line.Using the related model parameters picked up,we can estimate the lifetime of these devices at normal working conditions and evaluate this ... |
| Keywords: | hot carrier effect thickness of gate oxide model parameter lifetime |
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