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Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies |
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| Authors: | SRC Pinto AG Rolo Maja Buljan RJ Kashtiban NP Barradas S Bernstorff |
| Affiliation: | a Centre of Physics, University of Minho, 4710-057 Braga, Portugal b LPS, Physics Department, Science Faculty, BP 1796, Fès, Morocco c Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic, Rudjer Boskovic Institute, Bijenicka 54, 10000 Zagreb, Croatia d Nanostructured Materials Research Group, School of Materials, The University of Manchester, P.O. Box 88, Manchester, M1 7HS, UK e Nuclear and Technological Institute (ITN), EN10, 2686-953 Sacavém, Portugal f Sincrotrone Trieste, 34012 Basovizza, Italy |
| Abstract: | In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer. |
| Keywords: | Ge nanocrystals Laser ablation deposition GISAXS TEM RBS Electrical measures |
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