| 自组装Si量子点阵中室温共振隧穿及微分负阻特性 |
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| 引用本文： | 余林蔚,陈坤基,宋捷,王久敏,王祥,李伟,黄信凡.自组装Si量子点阵中室温共振隧穿及微分负阻特性[J].半导体学报,2006,27(13):15-19. |
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| 作者姓名： | 余林蔚 陈坤基 宋捷 王久敏 王祥 李伟 黄信凡 |
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| 作者单位： | 南京大学物理系 固体微结构实验室,南京 210093;南京大学物理系 固体微结构实验室,南京 210093;南京大学物理系 固体微结构实验室,南京 210093;南京大学物理系 固体微结构实验室,南京 210093;南京大学物理系 固体微结构实验室,南京 210093;南京大学物理系 固体微结构实验室,南京 210093;南京大学物理系 固体微结构实验室,南京 210093 |
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| 摘 要： | 报道了自组装Si量子点（Si-QDs）阵列在室温下的共振隧穿及其微分负阻特性. 在等离子增强化学气相沉淀系统中，采用layer-by-layer的淀积技术和原位等离子体氧化方法制备了Al/SiO2/Si-QDs/SiO2/Substrate双势垒结构. 通过原子力显微镜和透射电子显微镜检测，证实所获得的Si-QDs阵列中Si量子点平均尺寸为6nm，并具有较好的尺寸均匀性（小于10%). 在对样品的室温I-V和C-V特性的测量中，直接观测到由于Si量子点中分立能级而引起的共振隧穿和充电效应：I-V特性表现出显著的“微分负阻特性(NDR)" ；而C-V特性中也同样观测到位置相对应、结构相似的峰结构,从而证实了I-V和C-V特性中的峰结构都同样来源于电子与Si量子点阵列中分离能级之间的共振隧穿和充电过程. 进一步研究发现，Si量子点阵列中共振隧穿和NDR特性所特有“扫描方向”和“速率”依赖性及其机制，与量子阱的情况有所不同. 通过所建立的主方程数值模型，成功地解释并重复了Si量子点阵中共振隧穿所特有的输运特性.
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| 关 键 词： | Si量子点阵列 NDR 共振隧穿 |
Room Temperature Resonant Tunneling and Negative DifferentialResistance Effects in a Self-Assembed Si Quantum Dot Array |
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| Yu Linwei,Chen Kunji,Song Jie,Wang Jiumin,Wang Xiang,Li Wei and Huang Xinfan.Room Temperature Resonant Tunneling and Negative DifferentialResistance Effects in a Self-Assembed Si Quantum Dot Array[J].Chinese Journal of Semiconductors,2006,27(13):15-19. |
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| Authors: | Yu Linwei Chen Kunji Song Jie Wang Jiumin Wang Xiang Li Wei and Huang Xinfan |
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| Affiliation: | National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China |
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| Abstract: | We report the room temperature resonant tunneling and negative differential resistance (NDR) effects in a self-assembled Si quantum dot (Si-QDs) array.The double-layer structure of Al/SiO2/Si-QDs/SiO2/p-Si substrate is fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition (PECVD) system.Obvious NDR effects are directly observed in the current-voltage characteristics,and similar peak structures at the same voltage are also identified in the capacitance-voltage characteristics.Both of them are attributed to the resonant tunneling and charging dynamics in the Si-QD array.Moreover,the major features,such as the scan-rate and scan-direction dependences of the peak structure,are investigated,and the underlying mechanism is found to be quite different from that of a quantum well structure.Based on a master-equation numerical model,the resonant tunneling and charging dynamics together with the unique features can be satisfactorily explained and reproduced. |
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| Keywords: | Si quantum dot array NDR resonant tunneling |
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