| 重频激光辐照半导体损伤的有限元分析 |
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| 引用本文： | 刘全喜,钟 鸣,江 东,齐文宗,蔡邦维,郝秋?.重频激光辐照半导体损伤的有限元分析[J].激光与红外,2006,36(8):670-674. |
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| 作者姓名： | 刘全喜 钟 鸣 江 东 齐文宗 蔡邦维 郝秋? |
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| 作者单位： | 1. 四川大学电子信息学院,四川,成都,610064
2. 西南技术物理所,四川,成都,610041 |
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| 基金项目： | 西南技术物理研究所资助项目 |
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| 摘 要： | 在考虑到材料热力学参数随温度变化的前提下,以热传导方程和热弹方程为基础,采用有限元分析算法,考查了200ns脉宽、1064nm波长重频激光辐照下,半导体材料InSb体内的温升和热应力分布,分析了由温升效应所致该材料的损伤破坏类型,探讨了热熔融损伤和热应力损伤阈值随光斑尺寸、脉宽、重复率、脉冲次数等的变化规律。
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| 关 键 词： | 重频激光 损伤阈值 有限元分析 热传导方程 热弹方程 |
| 文章编号： | 1001-5078（2006）08-0670-05 |
| 收稿时间： | 2006-02-23 |
| 修稿时间： | 2006-02-232006-03-27 |
Finite Element Analysis of Damage Threshold of Semiconductor Irradiated by Multiple Laser |
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| LIU Quan-xi,ZHONG Ming,JIANG Dong,QI Wen-zong,CAI Bong-wei,HAO Qiu-long,ZHAO Fang-dong.Finite Element Analysis of Damage Threshold of Semiconductor Irradiated by Multiple Laser[J].Laser & Infrared,2006,36(8):670-674. |
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| Authors: | LIU Quan-xi ZHONG Ming JIANG Dong QI Wen-zong CAI Bong-wei HAO Qiu-long ZHAO Fang-dong |
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| Affiliation: | 1. College of the Electronics Information, Sichuan University, Chengdu 610064, China; 2. South-west Institute of Technical Physics, Chengdu 610041, China |
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| Abstract: | Under considering the influence of temperature distributions to the thermodynamic parameters of the material, based on the thermal conduction equations and the thermal-elastic equations, the transient distributions of temperature and thermal stress in the semiconductor material InSb are calculated by a finite element analysis method. The damage mechanism of the material irradiated by 200 ns/1064 nm pulse lasers is studied. And the influence of the beam radius, the pulse width, the repetition rate and the number of pulses to the melting threshold and the thermal
stress damage threshold of InSb is investigated in this paper. |
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| Keywords: | InSb |
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