The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1?xInxNyAs1?y/GaAs quantum well |
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| Authors: | Unal Yesilgul Fatih Ungan Serpil ?akiro?lu Carlos Duque Miguel Mora-Ramos Esin Kasapoglu Huseyin Sari Ismail S?kmen |
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| Affiliation: | 1.Physics Department, Cumhuriyet University, Sivas, 58140, Turkey;2.Physics Department, Dokuz Eylül University, Izmir, 35140, Turkey;3.Instituto de Fisica, Universidad de Antioquia, Medellin, AA, 1226, Colombia;4.Faculty of Sciences, Morelos State University, Cuernavaca, CP, 62209, Mexico |
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| Abstract: | Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations. |
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| Keywords: | Impurities Quantum well Dilute nitride |
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