Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates |
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Authors: | H S Kim D H Ko D L Bae N I Lee D W Kim H K Kang M Y Lee |
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Affiliation: | (1) Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea;(2) Department of Ceramic Engineering, Yonsei University, Shinchon-Dong, Seodaemun-Ku, 120-749 Seoul, Korea |
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Abstract: | We have investigated the thermal degradation of gate oxide in metal-oxide-semiconductor (MOS) structures with Ti-polycide
gates. We found that the Ti-diffusion into the underlying polysilicon and consequently to the gate oxide occurs upon thermal
cycling processes, which results in the dielectric breakdown of the gate oxide. We also found that the Ti-diffusion is suppressed
by the employment of the thin (about 5 nm) titanium nitride (TiN) diffusion barrier layer, which consequently improved the
reliability characterisitics of gate oxide significantly. |
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Keywords: | Gate oxide reliability metal-oxide-semiconductor (MOS) Ti-polycide gates |
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