首页 | 官方网站   微博 | 高级检索  
     


Reproducible Ultrathin Ferroelectric Domain Switching for High-Performance Neuromorphic Computing
Authors:Jiankun Li  Chen Ge  Jianyu Du  Can Wang  Guozhen Yang  Kuijuan Jin
Affiliation:1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China

University of Chinese Academy of Sciences, Beijing, 100049 China

Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China

Abstract:Neuromorphic computing consisting of artificial synapses and neural network algorithms provides a promising approach for overcoming the inherent limitations of current computing architecture. Developments in electronic devices that can accurately mimic the synaptic plasticity of biological synapses, have promoted the research boom of neuromorphic computing. It is reported that robust ferroelectric tunnel junctions can be employed to design high-performance electronic synapses. These devices show an excellent memristor function with many reproducible states (≈200) through gradual ferroelectric domain switching. Both short- and long-term plasticity can be emulated by finely tuning the applied pulse parameters in the electronic synapse. The analog conductance switching exhibits high linearity and symmetry with small switching variations. A simulated artificial neural network with supervised learning built from these synaptic devices exhibited high classification accuracy (96.4%) for the Mixed National Institute of Standards and Technology (MNIST) handwritten recognition data set.
Keywords:electronic synapses  ferroelectric domain switching  ferroelectric tunnel junctions  neuromorphic computing  ultrathin films
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号