A novel structure in reducing the on-resistance of a VDMOS |
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| Authors: | Yang Yonghui Tang Zhaohuan Zhang Zhengyuan Liu Yong Wang Zhikuan Tan Kaizhou Feng Zhicheng |
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| Affiliation: | 1. Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China;National Laboratory of Analog ICs, Chongqing 400060, China
2. Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China |
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| Abstract: | A novel structure of a VDMOS in reducing on-resistance is proposed.With this structure,the specific on-resistance value of the VDMOS is reduced by 22%of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory,and there is only one additional mask in processing the new structure VDMOS,which is easily fabricated.With the TCAD tool,one 200 V N-channel VDMOS with the new structure is analyzed,and simulated results show that a specific on-resistance value will reduce ... |
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| Keywords: | VDMOS on-resistance specific on-resistance breakdown voltage epitaxial layer resistance |
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