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1.
We present a method for stabilizing ferromagnetism in Mn doped ZnO. We find that Mn doped ZnO show anti-ferromagnetic order in the absence of additional carriers. When Mn doped ZnO is co-doped with C atom at O sites ferromagnetic state gets stabilized. The C doping creates holes which leads to stabilization of ferromagnetic state via hole mediated double exchange mechanism.  相似文献   
2.
Special solutions of the Hartree-Fock (HF) problem for Coulomb interacting electrons described by a simple model of the Cu-O planes in La2CuO4 are presented. One of the mean field states obtained, is able to predict some of the most interesting properties of this material, such as its insulator character and the antiferromagnetic order. The natural appearance of pseudogaps in some states of this material is also indicated by another of the HF states obtained. These surprising results follow after eliminating spin and crystal symmetry restrictions usually imposed on the single particle HF orbitals, by employing the rotational invariant formulation of the HF scheme originally introduced by Dirac. Therefore, it is exemplified here, how up to know considered strong correlation effects, can be described by improving the HF solution of the considered system. In other words, it has been argued, that defining correlation effects as the ones shown by the system and not predicted by the HF best (lowest energy) solution, allows to explain important, up to know considered as strong correlation properties, as simple mean field ones. The discussion also helps to clarify the role of the antiferromagnetism and pseudogaps in the physical properties of the HTSC materials and indicates a promising way to start conciliating the Mott and Slater pictures in the physics of the transition metal oxides and other strongly correlated electron systems.  相似文献   
3.
We compare different approximation schemes for investigating ferromagnetism in the periodic Anderson model. The use of several approximations allows for a detailed analysis of the implications of the respective methods, and also of the mechanisms driving the ferromagnetic transition. For the Kondo limit, our results confirm a previously proposed mechanism leading to ferromagnetic order, namely an RKKY exchange mediated via the formation of Kondo screening clouds in the conduction band. The contrary case is found in the intermediate-valence regime. Here, the bandshift correction ensuring a correct high-energy expansion of the self-energy is essential. Inclusion of damping effects reduces stability of the ferromagnetic phase. Received 5 June 2000 and Received in final form 3 August 2000  相似文献   
4.
We discuss various ways to handle self-interaction corrections (SIC) to Density Functional Theory (DFT) calculations. To that end, we use a simple model of few particles in a finite number of states together with a simple zero-range interaction for which full Hartree-Fock can easily be computed as a benchmark. The model allows to shed some light on the balance between orthonormality of the involved states and energy variance.  相似文献   
5.
The electronic and geometric structures of bulk PuO2 and its (110) surface have been studied using a periodic model within the generalized gradient approximation (GGA) of density functional theory (DFT). The sixty core electrons of the Pu atom have been represented by a relativistic effective core potential and scalar relativistic effects have been incorporated on the valence orbitals. For bulk PuO2, we predict an equilibrium lattice constant of 10.10 a.u. and a cohesive energy of 17.28 eV, in good agreement with experimental data. For the (110) surface, upon relaxation, the distance between the top layer and the next layer is found to decrease by 0.12 ?, i.e. 5.3% of the corresponding interlayer distance in the bulk. The distance between the two oxygen atoms on the top layer is found to increase by 0.15 ?, i.e. 5.6% of the corresponding bulk value. The small surface relaxation energy of 0.268 eV per unit cell indicates the fair stability of this surface. The effective charges on Pu and O atoms show that the chemical bonding in this system is not purely ionic. Together with the metallic feature of the density of states (DOS) on the surface, the effective charge distribution provides some basis for understanding surface reactivity and corresponding support for catalysis. Received 16 June 2000  相似文献   
6.
We have investigated photoluminescence (PL) from Si-based anodic porous alumina films formed by real-time controlled anodization of electron-beam evaporated Al films. As-anodized samples show three strong PL bands at 295, 340, and 395 nm. These bands blueshift and their intensities decrease after the samples are annealed. When the annealing temperature increases to 1000 °C, the blueshift becomes specially pronounced and meanwhile the structures of the films develop toward crystalline Al2O3. Based on discussions on the thermal annealing behaviors of the PL and PL excitation spectra, we suggest that optical transitions in oxygen-related defects, F+ (oxygen vacancy with one electron) centers, are responsible for the observed ultraviolet and violet PL. Received: 24 July 2000 / Accepted: 24 February 2001 / Published online: 3 May 2001  相似文献   
7.
First-principles calculations are performed to compute the e33 piezoelectric coefficients of GaN, ScN and (ScxGa1-xN) alloys exhibiting an alternation of hexagonal GaN, with hexagonal ScN along the c-axis. For Sc compositions larger than 50%, each atom has nearly five nearest neighbors (i.e., the ground state exhibits a phase that is five-fold coordinated). On the other hand, Sc-deficient (Sc, Ga) N alloys adopt a ground-state that is four-fold coordinated). The magnitude of e33 in the Sc-deficient ideally ordered (Sc0.25Ga0.75N) is found to be larger than the magnitude of the corresponding e33 coefficients resulting from the compositional weighted average over the hexagonal (h-ScN) and the wurtzite (w-GaN) parent compounds. On the other hand, the e33 coefficients of the Sc-rich ordered (Sc0.75Ga0.25N) is found to be negligibly small. In addition, e33 piezoelectric coefficients in ordered (Sc0.5Ga0.5N) exhibit quite large magnitudes, due to the nonpolar to polar transition occurs at Sc composition x = 0.5, and thus can bridge the corresponding coefficients of (Ga, In) N and ferroelectric alloys. The microscopic origins for this huge enhancement in the piezoelectric behavior in Sc-low and Sc-intermediate alloys and the role of each atom are revealed and discussed.  相似文献   
8.
The electronic band structure of YbRhSn has been calculated using the self-consistent full potential nonorthogonal local orbital minimum basis scheme based on the density functional theory. We investigated the electronic structure with the spin-orbit interaction and on-site Coulomb potential for the Yb-derived 4f orbitals to obtain the correct ground state of YbRhSn. The exchange interaction between local f electrons and conduction electrons play an important role in the heavy fermion characters of them. The fully relativistic band structure scheme shows that spin-orbit coupling splits the 4f states into two manifolds, the 4f7/2 and the 4f5/2 multiplet.  相似文献   
9.
The DOS (density of states) and the optical properties of HgS under high pressure are studied with the first-principle computations. The change of the imaginary part, ε2(ω), of the dielectric function shows that HgS tends to metallization with increasing pressure, and this well agrees with the band gap calculations and the conductivities measurement results in the previous work. Under the pressures below 15 GPa, ε2(ω) is relatively anisotropic and tends to be more anisotropic with increasing pressure; while under the pressures above 15 GPa, the anisotropy decreases and finally becomes almost absolutely isotropic after the phase transition. The behavior of ε2(ω) is strongly related to the structure change in the cinnabar to rocksalt phase transition process under high pressure.  相似文献   
10.
Photoluminescence (PL) of anodic alumina membranes (AAMs) with ordered nanopore arrays fabricated in oxalic acid has been investigated under different annealing temperatures. The PL intensity firstly increases, and at 500 °C reaches a maximum value, then decreases. The structural transition from amorphous to γ-Al2O3 in AAMs has been confirmed by X-ray diffraction. Thermogravimetric analysis results and electron paramagnetic resonance measurements revealed that the PL band of alumina membranes could be attributed to the oxygen-related defect centers (F+ centers) rather than the luminescent centers transformed from oxalic impurities.  相似文献   
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