Impact of “terminal effect” on Cu electrochemical deposition: Filling capability for different metallization options

The 300 mm wafer copper electrochemical deposition (ECD) process for dual damascene metallization of semiconductor advanced interconnects is critically reviewed and the breakthroughs that enable further scaling of this process are examined. Special emphasis is placed on analyzing the critical issues, such as barrier/seed options, terminal effect and future plating prospects for this technology. The smallest plateable feature size values are estimated for different metallization integration schemes, such as conventional Physical Vapor Deposited (PVD) TaN/Ta/Cu, hybrid RuTa/Cu, CuMn (8%) self-forming barrier/seed, and Plasma-Enhanced Atomic Layer Deposition (PEALD) Ru, limiting the allowed maximum sheet resistance to 14 Ohms/sq for the Cu-based seeds and the effective maximum filling aspect ratio to 5-6.     

Copper deposition onto silicon by galvanic displacement: Effect of Cu complex formation in NH4F solutions

Copper was deposited onto rotating Si substrates by galvanic displacement in 6.0 M NH₄F to determine the effects of Cu complex formation on deposition rates. Deposition rates decreased with increasing rotation speed, indicating that Cu(I) intermediates, stabilized by NH₃, diffuse away from the Cu surface before they reduce to Cu(0). UV-visible spectra of contacting solutions and direct measurements of mass changes resulting from Cu deposition and Si removal confirmed this proposal. These findings contrast those reported previously for deposition from HF solutions, in which Cu(I) species are unstable and reduce rapidly to Cu(0). These data and mixed-potential theory were used to develop a reaction-transport model that accurately describes the effects of mass transfer and electrochemical reaction rates on Cu deposition dynamics and open-circuit potential (OCP) values. The effects of ascorbic acid and tartrate additives on film properties and formation rates were also examined. Cu reduction kinetics decreased significantly when ascorbic acid (0.01 M) was present. Adhesion of Cu films was improved when ascorbic acid was used, but internal stresses caused films to distort when their thicknesses exceeded 100 nm. Adding potassium sodium tartrate to solutions containing ascorbic acid decreased film stresses and led to robust films with excellent adhesion.     

利用原料1生产金属化阳极板试验研究

本文介绍了利用原料1在合金硫化炉进行金属化阳极板试验的过程。通过在合金硫化炉中进行原料1硫化、吹炼等试验过程,达到提镍降硫的目的。并在试验过程中摸索出了生产金属化阳极板的关键参数,同时对金属化阳极板中化学成分、镍直收率、钴直收率等关键指标进行了分析,为金属化阳极板的工业化生产提供了理论依据。     

生物分子模板法制备低维金属纳米材料研究进展(I)

概述了脂类、蛋白质、DNA等生物分子模板表面化学沉积制备低维金属纳米材料的最新研究进展.脂类、蛋白质和DNA分子可自组装形成不同的纳米结构,如纳米管和纳米线等.这些不同的纳米结构可作为模板,化学沉积制备不同的低维金属纳米材料.金属纳米管具有高强度、导电、导热、磁性,在电活性复合材料,药物和海洋防污剂的可控缓释等领域有重要的应用;金属一维纳米线具有特殊的量子效应,可用于纳米器件和纳米电路的开发.该研究可以帮助人们将生物学知识转变为材料学知识,该方法是分子自组装纳米材料和纳米结构走向工程应用的重要途径之一.     

Microstructural effects on the 1/f α noise of thin aluminum based films

The 1 /f^α noise was measured on a variety of Al-based thin metal films with widely varying microstructure using an ac bridge technique. The magnitude of the current noise in response to a small, non-destructive ac signal was found to vary several orders of magnitude between 0.01 and 10 Hz and was correlated to the microstructural differ-ences of the films. These differences have a strong affect on film lifetimes as measured in an accelerated electromigration test. Variation in microstructure was accomplished by different deposition temperatures and annealing parameters, and verified using TEM micrographs. Following fabrication, the current noise magnitude was measured and found to be sensitive to film width and grain size. The use of this technique to discriminate differences in film microstructure is discussed along with the correlations between ex-cess noise and the quality of the thin film as a metallic interconnection.     

某高铁铝土矿石铝铁分离试验

大量高铁铝土矿因氧化铁含量高、矿物嵌布关系复杂而处于待开发状态。为确定四川某高铁铝土矿的高效开发利用方案,对还原焙烧—弱磁选提铁—铝溶出的铝铁高效分离回收工艺中主要影响因素——焙烧制度、焙烧产物磨矿细度及弱磁选磁场强度进行了单因素条件试验。结果表明,在还原焙烧试样粒度为0.18~0 mm、配碳系数为2.0、焙烧温度为1 350℃、焙烧时间为20 min、焙烧产物磨矿细度为-0.074 mm占91%、弱磁选磁场强度为60kA/m情况下,可取得铁品位为89.83%、铁回收率为84.08%的金属铁粉,Al2O3浸出率为69.35%,较好地实现了铝、铁分离。     

Microstructure control of copper films by the addition of molybdenum in an advanced metallization process

The effect of annealing on the resistivity, morphology, microstructure, and diffusion characteristics of Cu(Mo)/SiO₂/Si and Ti/Cu(Mo)/SiO₂/Si multilayer films has been investigated in order to deterine the role of Mo. In the case of a Cu(Mo)/SiO₂/Si multilayer, most of the Mo diffused out to the free surface to form MoO₃ at temperatures up to 500 C, and complete dissociation of Mo occurred at higher temperatures. The segregation of Mo to the external surface leads to Mo-free Cu films with extensive grain growth up to 20 times the original grain size and strong (111) texture. In the case of a Ti/Cu(Mo)/SiO₂/Si multilayer, a thin Ti film prohibits Cu agglomeration, out-diffusion of Mo, and diffusion of Cu into SiO₂ at temperatures up to 750 C. Cu(Mo) grain growth was less extensive, but (111) fiber texturing was much stronger than in the case of Cu(Mo)/SiO₂/Si. In the current study, significant changes in microstructure, such as a strong (111) texture and abnormal grain growth, have been obtained by adding Mo to Cu films when the films are annealed.     

The Al-1 per cent Si/TiN/Ti interconnection scheme: Electromigration and reliability extrapolations

The electromigration performance of the Al-1 per cent Si/TiN/Ti metal scheme is investigated both for contacts and for stripes and compared with the results for the standard Al-1 per cent Si metallization. Statistical extrapolations at the operating conditions for a device have been performed to calculate the useful life of contacts and stripes. The results indicate that the most severe limitation to the interconnection reliability is given by the contacts without the diffusion barrier layer.     

陶瓷管壳金属化黑斑的成因探讨

对陶瓷管壳在金属化过程中产生的黑斑进行观察和检测分析 ,对其产生原因进行了探讨并提出一些改进措施。     

金属化瓷件花斑的探讨

对生产过程中出现的金属化瓷件内花斑现象进行了分析，探讨了形成的原因，并提出了一些改进措施。