Automatic counting of etch Pits in InP

A computer algorithm for automatic EPD-counting (etch-pit density) with an optical microscope is presented. Several dislocation etchants proposed in the literature to reveal structural defects on InP were employed and improved. Their reliability for automatic counting was proven. For a considerable number of samples exhibiting an EPD between 10⁴ and 10⁶ cm⁻² it is shown that the automatically counted number of etch pits agrees with the visually determined value within less than ±30%. Using a modified H₃PO₄:HBr etchant good results for automatically determined EPDs beyond 10⁷ cm⁻² were obtained on InP layers epitaxially grown on Si substrates.     

Si／InP材料的应力转化特性分析

InP材料被广泛的应用于光电子领域,但其材料脆、工艺不成熟、成本高,而Si基外延InP材料能良好的改善该技术瓶颈。论文中对不同介质、不同厚度的介质键合制备Si／InP材料进行了分析。其中以SiO2键合制备的Si／InP材料应力转化率最高,且SiO2制备工艺简单、亲水,材料键合强度大,机械特性好,是键合制备Si／InP材料的首选。而且,SiO2键合介质越薄,其应力转化率越高,材料对力学信号就越敏感,制备的Si／InP材料的机械性能越好。     

Si/InP材料的应力转化特性分析

InP材料被广泛的应用于光电子领域,但其材料脆、工艺不成熟、成本高,而Si基外延InP材料能良好的改善该技术瓶颈。论文中对不同介质、不同厚度的介质键合制备Si/InP材料进行了分析。其中以SiO2键合制备的Si/InP材料应力转化率最高,且SiO2制备工艺简单、亲水,材料键合强度大,机械特性好,是键合制备Si/InP材料的首选。而且,SiO2键合介质越薄,其应力转化率越高,材料对力学信号就越敏感,制备的Si/InP材料的机械性能越好。     

The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si

Several microns thick epitaxial InP films have been successfully deposited on exactly oriented (100) Si substrates by metal-organic vapour-phase epitaxy. We have studied the influence of a hydride preflow before buffer growth on the crystalline quality of the InP by measuring the surface roughness, by X-ray diffractometry, TEM and SEM investigations, and by detection of anti-phase-domains. Generally, an AsH₃ preflow instead of PH₃ improved the crystalline perfection considerably. Furthermore, if AsH₃ is introduced only during cool-down between 700 and 900° C after the thermal cleaning step anti-phase-domain free InP is grown.