Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

Computational studies on the radiative and nonradiative processes of luminescent N-heteroleptic platinum(II) complexes

Three N-heteroleptic Pt(II) complexes, [Pt(C^C)(O^O)] [O^O = acetylacetonate, C^C = 1-phenyl-1,2,4-triazol-5-ylidene (1), C^C = 4-phenyl-1,2,4-triazol-5-ylidene (2), C^C = 2-phenylpyrazine (3)] have been investigated with density functional theory (DFT) and time-dependent density functional theory (TDDFT). The radiative decay rate constants of complexes 1–3 have been discussed with the oscillator strength (f_n), the strength of spin–orbit coupling (SOC) interaction between the lowest energy triplet excited state (T₁) and singlet excited states (S_n), and the energy gaps between E(T₁) and E(S_n). To illustrate the nonradiative decay processes, the transition states between triplet metal-centered (³MC) and T₁ states have been optimized and were verified with the calculations of vibrational frequencies and intrinsic reaction coordinate (IRC). In addition, the minimum energy crossing points (MECPs) between ³MC and ground states (S₀) were optimized. At last, the potential energy curves relevant to the nonradiative decay pathways are simulated. The results show that complex 3 has the biggest photoluminescence quantum yield because the complex 3 has the biggest radiative decay rate constant and the smallest nonradiative decay rate constant in complexes 1–3.     

Revised Model of Strain in Ceria–Zirconia-Encapsulated Precious-Metal Particles

A previously proposed model of strain in ceria–zirconia-encapsulated precious-metal particles is revised to reflect several new observations: encapsulation of unstrained Pt particles, quantitative relation between partial reduction and the change in ceria–zirconia cell parameters, temperature/time dependence of strain relaxation/imposition in encapsulated Pd and Rh particles, and strained PdO. According to the revised model, the main cause of strain is partial oxidation of the precious metal (rather than the change in oxygen content of ceria–zirconia, as originally suggested).     

Si衬底上Ta-N/Cu薄膜性能研究

对Si衬底上Ta-N/Cu薄膜进行了电学和热学分析，结果发现500℃以下薄膜电随几乎不变，600-690℃下的退火引起的电阻率降低是由于Ta-N电阻的热氧化和Cu熔化扩散引起的，而690℃以上的电阻率增加是由于Cu引线传输能力减弱所致，为0.18μm以下的超大规模集成电路中的Cu引线和电阻薄膜的制作提供了有益的借鉴。     

数字电位器的应用技术

从应用的角度出发，介绍合理设计应用电路和合理选择数字电位器的种类与型号，来克服数字电位器普遍存在的主要缺点的方法。文章具有较强的针对性和可操作性，对数字电位器的应用实践具有指导作用。     

磷酸盐激光玻璃中铂颗粒密度与氧化还原平衡关系的研究

用吸收光谱法研究了Ｒ２Ｏ—ＢａＯ—Ｐ２Ｏ５系统磷酸盐激光玻璃中铂颗粒密度与铭的氧化还原平衡的关系。结果表明，玻璃中铂颗粒密度随平衡向右移动而减小；玻璃中平衡随熔炼气氛中氧分压增大、熔炼温度升高而向右移动，当足够大时，铂颗粒不能形成。     

钌基厚膜电阻传导模型初探

介绍钌基厚膜电阻的三种传导模型。三种模型都可以得到较满意的R—V曲线，不足处是链模型得出电阻率和导电相粒子形状及尺寸的关系和实验事实不符；有效介质模型不能反映厚膜电阻形成过程中众多因素的影响；渗透模型很多参数的获得有赖经验公式。渗透模型能反映烧结过程中更多因素的影响，并可解释方阻与导电相粒度及峰值温度的变化关系。     

硫酸铵-氯化亚锡-孔雀绿体系浮选分离铂

研究了在盐酸介质中硫酸铵存在下氯化亚锡—孔雀绿—水体系浮选分离铂的方法。在最佳实验条件下，铂的浮选率可达100．0％，并与常见贱金属完全分离。     

片式阻容元件的现状和发展方向

在国外的片式元器件（ＳＭＤ）中，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。