首页 | 官方网站   微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   47036篇
  免费   3167篇
  国内免费   2406篇
工业技术   52609篇
  2024年   125篇
  2023年   608篇
  2022年   1360篇
  2021年   1385篇
  2020年   1180篇
  2019年   1017篇
  2018年   879篇
  2017年   1354篇
  2016年   1582篇
  2015年   1656篇
  2014年   2363篇
  2013年   2459篇
  2012年   2788篇
  2011年   3698篇
  2010年   2785篇
  2009年   3411篇
  2008年   2706篇
  2007年   3050篇
  2006年   2869篇
  2005年   2346篇
  2004年   1878篇
  2003年   1876篇
  2002年   1526篇
  2001年   1198篇
  2000年   1047篇
  1999年   877篇
  1998年   641篇
  1997年   477篇
  1996年   422篇
  1995年   344篇
  1994年   321篇
  1993年   269篇
  1992年   229篇
  1991年   197篇
  1990年   174篇
  1989年   127篇
  1988年   126篇
  1987年   104篇
  1986年   111篇
  1985年   111篇
  1984年   95篇
  1983年   82篇
  1982年   83篇
  1981年   94篇
  1980年   79篇
  1978年   73篇
  1977年   75篇
  1976年   89篇
  1975年   89篇
  1974年   74篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
1.
2.
An equiatomic CoCrFeNiMn high-entropy alloy was synthesized by mechanical alloying (MA) and spark plasma sintering (SPS). During MA, a solid solution with refined microstructure of 10 nm which consists of a FCC phase and a BCC phase was formed. After SPS consolidation, only one FCC phase can be detected in the HEA bulks. The as-sintered bulks exhibit high compressive strength of 1987 MPa. An interesting magnetic transition associated with the structure coarsening and phase transformation was observed during SPS process.  相似文献   
3.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2  cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.  相似文献   
4.
丁小波 《电子科技》2015,28(4):142-145
介绍了一种基于高性能浮点DSP芯片TMS320C32、CPLD芯片XC95288和A/D采样芯片AD976组成的多路采集系统的工作原理以及设计方法。通过对第一路施加特殊的电压量,在CCS开发环境下读取采样缓冲区的值,并利用Matlab对采样数据进行了全波傅氏变换。此外,该系统已在继电保护中得到广泛应用,实践表明,该系统能较好地解决多路模拟量的采集,并确保了采样数据的安全可靠性。  相似文献   
5.
Linear friction welding of the Ti6Al4V alloy is studied. A new definition of the energy input rate is proposed, based on an integration over time of the in-plane force and velocity; a strong correlation with the upset rate is then found. The effective friction coefficient is estimated to be 0·5±0·1 for varying frequencies and amplitudes, with only a weak dependence on the processing conditions displayed. A model is proposed that accounts for both the conditioning and equilibrium stages of the process, which is shown to be in good agreement with the experimental data. The model is used to study the mechanism by which the flash is formed. A criterion is proposed by which the rippled nature of its morphology can be predicted.  相似文献   
6.
7.
《Planning》2015,(12):33-35
目的:探讨IL-27与LTB4在非小细胞肺癌组织中的表达情况及临床意义。方法:采用免疫组化S-P法分别检测60例非小细胞肺癌组织及正常肺组织中的IL-27与LTB4的表达水平。结果:IL-27与LTB4在肺癌组织中的总阳性表达率分别为41.67%、63.33%,各种检测指标的阳性率在肺癌组织与对照组之间均存在着差异性(P<0.05)。IL-27与LTB4的表达均与肿瘤的分化程度有关(P<0.05),IL-27的表达与肺癌的TNM分期相关(P<0.05),与病理类型无关(P>0.05)。LTB4的表达与组织学类型、临床分期无关(P>0.05),IL-27与LTB4之间存在密切相关性。结论:IL-27、LTB4与肺癌发生机制及发展有密切关系,联合进行检测两者表达水平对于肺癌临床诊断、评估恶性程度及判断预后有重要意义。  相似文献   
8.
就软交换网络和WCDMAR4网络互通的关键技术进行了分析和探讨,并借此提出了对互通节点的技术要求。  相似文献   
9.
Supported metal catalysts, particularly noble metals supported on SiO2, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO2/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO2 films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.  相似文献   
10.
Diphenylzinc, alone or in combination with water and butanone as coinitiators, was used as a polymerization initiator system for a variety of lactones at varying temperatures. The resulting data indicate that the course of the polymerization is greatly influenced by the lactone structure, as well as by the molar ratio of coinitiator to diphenylzinc. When used alone, diphenylzinc exhibited high activity as an initiator in δ‐valerolactone polymerizations, although it was less efficient when used in the β‐butyrolactone and the β‐propiolactone polymerizations. Activity in the polymerization of β‐lactones was increased by adding small amounts of butanone or water. It was also observed that the diphenylzinc–butanone combination was more effective than the diphenylzinc–water mixture in the polymerizations of β‐butyrolactone and β‐propiolactone. Copyright © 2003 Society of Chemical Industry  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号