Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

Copper Indium Gallium Selenide (Cu(In,Ga)Se₂, CIGSe) absorbers with different Ga contents were prepared by sputtering CIGSe ceramic targets and post-annealing. CIGSe solar cell devices were fabricated with other functional layers. The device performances and absorber properties were investigated. Increasing Ga content led to an increase in V_OC and a decrease in J_SC. Ga was supposed to diffuse towards back contact during the annealing process. The best performance was obtained as the ratio of Ga/(In + Ga) reaches 0.32 with the efficiency of 13.8% and a V_OC of 537 mV.     

Effects of surface roughness of substrates on the c-axis preferred orientation of ZnO films deposited by r.f. magnetron sputtering

The c-axis preferred orientation of ZnO film is the most important factor for its successful application in piezoelectric devices. The effects of surface roughness of the substrate on the c-axis preferred orientation of ZnO thin films, deposited by radio frequency magnetron sputtering, were investigated. During sputtering, the oxygen content in the argon environment used was varied from 0 to 70% at a total sputtering pressure of 10 mTorr. Very smooth Si, smooth evaporated Au/Si, smooth evaporated-Al/Si, and rough sputtered-Al/Si were used as substrates. Their r.m.s. roughnesses, as measured by atomic force microscopy, were 1.27, 17.1, 21.1 and 65-118 Å, respectively. The crystalline structure and the angular spread of the (0 0* 2) plane normal to the ZnO films were determined using X-ray diffraction and X-ray rocking curves, respectively. The crystallinity and the preferred c-axis orientation of the ZnO films were strongly dependent on the surface roughness of the substrates rather than on the oxygen content of the working environment or on the chemical nature of the substrate.     

Stages of surface erosion under ion irradiation

Initial stages of surface erosion have been studied for NaCl and LiF single crystals bombarded by Ar⁺ ions with 20 keV. For irradiation with doses D=10¹⁰-10¹¹ ions/cm², exoelectron emission has been used, whereas for higher doses, we have used electron microscopy. Two stages of initial surface erosion have been identified; for small doses, there is slow development of atomic-scale roughening, which reaches its peak when areas damaged by closest incident ions start to overlap, and then, beginning with D=10¹⁶ ions/cm², there is rapid etching, deep into the crystal, followed by the emergence of secondary microscopic structure, i.e. caverns, concentric closed steps and terraces. Ion-induced surface structure of alkali halide crystals has been shown to depend strongly on the presence of foreign particles on the surface, as well as on segregation. Topography of thin carbon films and some metals have been discussed.     

Secondary ion emission from Ti and Si targets induced by medium energy Ar ion bombardment - Experiment and computer simulation

The paper presents experimental results of secondary ion energy distributions obtained for Ti and Si targets bombarded by 20-30 keV monoisotope Ar⁺ ion beam. The influence of the extraction voltages between target and a slit of the electrostatic energy analyzer entrance on the energy distributions of secondary ions was investigated. After optimization of the secondary ion extraction system, the mass spectra of secondary ions were also measured. The investigations were done using recently built experimental system. Experimental data are compared with the computer simulation results obtained using TRQR and SATVAL codes.     

Thin film deposition on a corrugated surface: A molecular dynamics approach

This paper presents the use of molecular dynamics (MD) simulation in the investigation of the surface topography of early-stage film growth on a GMR (giant-magnetoresistance) corrugated structure. The size of the simulated system is limited in order to reduce the computational workload. The numerical model adopts the Morse potential and the Verlet-leapfrog time evolution scheme [R.W. Hockney, 1970; D. Potter, 1972 (Chapter 5). [1]] to describe the atomic interactions which take place between the atoms. The impact energy transferred from the incident atoms to the substrate is modeled by rescaling the atoms within the upper substrate layers. It is found that the important properties of the film-substrate system may be obtained after the deposition of just several atomic layers. The influence of the impact velocity upon the coating parameters is investigated by varying the incident energy of the deposited atoms. The current results indicate that the surface coverage is poor, when atoms are deposited at low incident energies upon a low temperature substrate. At a higher incident energy, the deposited film tends to exhibit a quasi-layer-by-layer growth mechanism, which results in an improved surface coverage. Finally, it is demonstrated that a distinct quasi-fluid behavior is evident on the substrate when the atoms are deposited at high incident energies.     

陶瓷溅射靶材的发展与应用

在信息产业不少基础产品的制造过程中需使用多种陶瓷溅射靶材，世界陶瓷靶材的市场销售规模日益扩大。本文简要介绍了陶瓷靶材的应用分类、性能要求、制备工艺及溅射靶材制造中急需解决的主要技术问题。     

光信息存储与溅射靶材

在光盘制造过程中，需要使用多种溅射靶材。本文简介溅射靶材的制造及主要应用情况。     

氮化铝薄膜的制备及介电性能研究

采用直流磁控反应溅射的方法在金属铝基板表面沉积AlN薄膜。通过XRD、SEM对绝缘膜层进行了研究分析,并测试了膜层的介电性能。结果表明:在靶基距和溅射功率分别为5cm、150W,衬底温度在室温25℃~300℃内制备的AlN薄膜为六方晶型,沿c轴平行于衬底表面的(100)和(110)晶面生长。AlN薄膜表面有很多蠕虫状形态的晶粒随机地分布在膜平面内,这可能是200℃的衬底温度下AlN薄膜介电性能较好的原因。     

Self-aligned fabrication of single crystal diamond gated field emitter array

This paper describes a self-aligned fabrication process for diamond gated field emitter array (FEA). Utilizing the non-conformal coverage sputtering conditions of silicon oxide, an interesting “sphere on cone” structure is formed on diamond nano tip array, which is the key point of gate hole opening process. This structure causes shadowing at certain regions of side-wall during Ti / Au gate metal deposition. Removal of “sphere” by wet etching leads to the successful fabrication of a single crystalline diamond gated FEA. Scanning electron microscope observations reveal the fabrication of a uniform emitter array with tip radius of curvature (20 nm) and gate hole (1.4 μm). We also confirmed that no noticeable physical damage exists on tip. In field emission characteristics of the fabricated single crystal diamond gated FEA, gate voltage control of field emission current is realized.     

Optimization of the sputter-deposited platinum cathode for a direct methanol fuel cell

The electrodes prepared by a sputtering method were evaluated as the cathodes for direct methanol fuel cells (DMFCs). Pt loading below 0.25 mg cm⁻² achieved higher mass activities than that of 0.5 mg cm⁻² prepared by the paste method, which was general conventional method. However, an increase in Pt loading reduced the catalyst activity for the oxygen reduction reaction (ORR). This result may suggest an increase in only electrochemically inactive Pt. Pt utilization efficiency can be found about ten times higher at Pt loading of 0.04 mg cm⁻². Moreover, addition of Nafion to sputter-deposited Pt cathodes is found possible to improve the catalyst activity for the ORR, but the excess Nafion over the optimum condition reduces the active sites.