Synthesis and luminescence of Sr2CeO4 fine particles

Fine particles of a blue emission phosphor Sr₂CeO₄ have been synthesized using a chemical co-precipitation technique, and the textual and luminescent properties were compared with the one synthesized by the conventional solid-state reaction method. Particle size and distribution of the Sr₂CeO₄ fine powder prepared by the co-precipitation process were smaller and narrower than those obtained by the samples prepared from the conventional one. The emission intensity of the fine particles was equal to that of the larger particles prepared from the solid-state reaction, on the contrary to the general tendency that emission intensity decrease with particle size reduction. Although no Ce³⁺ peaks were observed in EPR measurements, X-ray photoelectron spectra of the samples clearly elucidated the existence of Ce³⁺ only on the surface of Sr₂CeO₄.     

Acidity and basicity of hydrotalcite derived mixed Mg-Al oxides studied by test reaction of MBOH conversion and temperature programmed desorption of NH3 and CO2

Mg-Al hydrotalcites intercalated with five different interlayer anions—CO₃²⁻, SO₄²⁻, Cl⁻, HPO₄²⁻ or terephthalate—were synthesized by either the coprecipitation or ion-exchange method. The structure of the as-synthesized samples and the presence of intended anions in the interlayer gallery of hydrotalcites were determined by X-ray diffraction and FTIR spectroscopy. On calcination at 600 °C the materials were transformed into mixed metal oxides. The kind of the counterbalancing anions present in the parent hydrotalcite influences strongly textural parameters of the obtained Mg-Al oxides. Both temperature-programmed desorption of NH₃ and CO₂, and test reaction of 2-methyl-3-butyn-2-ol (MBOH) conversion were used to determine the acidity and basicity of the samples. The hydrotalcite derived mixed Mg-Al oxides showed the presence of Brønsted and Lewis acid and base sites. However, the strong basic character of the solids caused that acetone and acetylene were observed as the major products of MBOH conversion.     

Effects of gallia additions on sintering behavior of gadolinia-doped ceria

The effects of gallia additions on the sintering behavior of gadolinia-doped ceria were systematically investigated from the following aspects: the variation in sintered density, the variation in grain size, and the existing forms of Ga₂O₃ in CeO₂.Sintered density increased with increasing Ga₂O₃ content up to 5 mol.% and then it decreased with further addition of Ga₂O₃. Grain size also increased with increasing Ga₂O₃ content up to 5 mol.% and then decreased with further addition of Ga₂O₃. Decrease in grain size was caused by a pinning effect of Ga₂O₃ precipitation at grain boundaries. Lattice constant decreased with increasing Ga₂O₃ content up to 5 mol.%. This decrease will be due to the substitution of smaller Ga³⁺ ions for Ce⁴⁺ ions in the CeO₂ structure. According to the results obtained from scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses, the solubility limit of Ga₂O₃ in Ce_0.8Gd_0.2O_1.9 ceramics can be estimated to be nearly 5 mol.%. The addition of Ga₂O₃ up to the solubility limit was found to promote the sintering properties of Gd₂O₃-doped CeO₂.     

Relationship of the Yttrium Compounds with the Alloying Method in ODS Ferritic Stainless Steel

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Catalytic decomposition of HCFC22 (CHClF2)

The catalytic decomposition of CHClF₂ was studied over various acidic metal oxides in a fixed-bed reactor. The Cr₂O₃ZrO₂ exhibited the highest activity. The presence of water vapor in the reaction system suppresses the transformation of oxides to fluorides, progresses the formation of CO₂, and it improves the catalysts life.     

Band gaps and defect levels in functional oxides

Most ab-initio calculations of the electronic structure use the local density approximation, which gives good structural data but severely underestimates the band gaps of semiconductors and insulators. This paper presents calculations of the band structures and oxygen vacancy levels of some important oxide semiconductors and insulators, using density functional methods which do give more accurate band gaps. The materials SnO₂, Cu₂O, SrCu₂O₂, CuAlO₂, SrTiO₃, HfO₂, ZrO₂, La₂O₃, ZrSiO₄, and SiO₂ are covered.     

Growth and morphology of nanometer LiMn2O4 powder

The growth of Li_1+xMn₂O₄ via detonation reaction was investigated with respect to the presence of an energetic precursor, such as the metallic nitrate and the degree of confinement of the explosive charge. The detonation products were characterized by scanning electron microscopy. Powder X-ray diffraction and transmission electron microscopy were used to characterize the products. Li_1+xMn₂O₄ with 1-2 μm spherical morphology and more uniform secondary particles, but with smaller primary particles of diameters from 20 to 60 nm and a variety of morphologies were found. The oxides produced by this cheap method affirmed the validity of detonation synthesis of nano-size powders.     

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205–300 °C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75–1.80. Calcium oxide films grown without Al₂O₃ capping layer occurred hygroscopic and converted to Ca(OH)₂ after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al₂O₃ capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 °C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO₂ growth cycles at 230 and 300 °C. HfCl₄ was used as a hafnium precursor. When grown at 230 °C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 °C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca₂Hf₇O₁₆ or Ca₆Hf₁₉O₄₄. At 300 °C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca₂Hf₇O₁₆. The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8–14.2.     

Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: Applicability to a variety of materials and epitaxial template layers

A reactive solid-phase epitaxy (R-SPE) method combines deposition of a thick amorphous or polycrystalline layer with a desired chemical composition and post-deposition solid-phase epitaxial growth. The solid-phase epitaxial growth is invoked by thermal annealing with an assistance of a sacrificial layer working as an epitaxial template. Thereby it enables us to grow high-quality epitaxial films of complex oxides whose epitaxial films are not grown by conventional high-temperature growth techniques. It was reported that 2-nm-thick ZnO layers worked as template for growing InGaO₃(ZnO)_m (m = integer) epitaxial films. The present study extended the R-SPE technique to growth of various complex oxides with chemical compositions of RAO₃(MO)_m and to use of various epitaxial template layers. We found that mono oxide epitaxial layers such as In₂O₃ and Ga₂O₃ work as template layers as well. Alternatively, a ZnO epitaxial layer is also applicable to ZnO-free compounds. The films obtained were grown heteroepitaxially on YSZ(111) and single-crystalline when the fabrication conditions are optimized.