Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe_3·5)_100−x Bi _x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.     

新型GeSe2-Ga2Se3-KI系统硫卤玻璃形成的研究

开发了有高含量碱金属离子的新型硫化物玻璃.合成了GeSe2-Ga2Se3-KI系统的玻璃样品.研究了该系统的玻璃形成区并用孤对电子理论进行了解释.讨论了Ga2Se3和KI对玻璃形成能力的影响.给出了该系统玻璃的密度、特性温度、Raman和可见一红外光谱等.实验结果表明:该系统具有较广的玻璃形成区,某些组成,如摩尔组成为50 GeSe2 25Ga2Se3 25KI的样品具有良好的热学和光学性质,其表征热稳定性的特征温度差大于120K,玻璃透光范围从590nm到14.2μm.     

PLD preparation of GeS6 amorphous film and investigation on its photo-induced darkening phenomenon

GeS6 chalcogenide amorphous fi lm was deposited on glass substrate via PLD（pulsed laser deposition） technique. The performance and structure of the fi lm was characterized by XRD（X-ray diffraction）, SEM（Scanning Electron Microscopy）, EDS（Energy Dispersive Spectroscopy）, optical transmission spectra, and Raman spectra, etc. The GeS6 amorphous fi lm was irradiated by 532 nm linearly polarized light, and its photoinduced darkening was investigated. The results showed that the GeS6 chalcogenide amorphous fi lm was smooth and compact with uniform thickness and combined with the substrate fi rmly, and its chemical composition was in consistency with the bulky target. When laser energy was fi xed, the transparence of the fi lm declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the fi lm after laser irradiation were observed in this investigation.     

High extinction-ratio microstructure fiber based on chalcogenide glasses

Extinction ratio (ER) is one of the important parameters to characterize the polarization-maintaining (PM) performance of the fiber. In this paper, we report the preparation and properties of a novel chalcogenide microstructure fiber with a high ER. We fabricate a preform using a peeled-off extrusion method. The core and cladding material of the fiber are Ge₉As₂₃Se₆₈ and Ge₁₀As₂₂Se₆₈. The preform was drawn into a fiber with an average ER of −17.08 dB. The loss of the fiber is less than 2 dB over 5.20–8.55 μm, and the minimum loss of the fiber is 0.57 dB/m at 6.2 μm. Moreover, a flat mid-infrared supercontinuum spectrum spanning from 1.53 to 12.50 μm is generated by pumping an 18-cm-long PM fiber for the first time.     

硫系玻璃磁光性能的研究进展

硫系玻璃因其Verdet常数与温度无关,容易制备成光纤、光波导等优点而成为磁光材料的研究热点。对硫系玻璃的磁光性能研究情况进行了综述,详细分析了影响硫系玻璃Verdet常数的因素,最后提出了硫系磁光玻璃的进一步发展方向。     

热处理对99.5Ge_(23)Se_(67)Sb_(10)-0.5CsCl玻璃组织和性能的影响

文中运用热处理的方法来提高99.5Ge23Se67Sb10-0.5CsCl红外玻璃的力学性能.采用XRD、SEM、FTIR和显微硬度计研究了热处理对99.5Ge23Se67Sb10-0.5CsCl玻璃组织和性能的影响.研究结果发现:当保温温度低于310℃时,随着保温时间的延长,99.5Ge23Se67Sb10-0.5CsCl材料析晶数目增多而尺寸变小,材料组织细化;红外透过率缓慢降低而硬度较好.当保温温度等于或高于310℃时,随着保温时间延长,材料内部晶粒粗大,透红外性能急剧变差且硬度变差.当玻璃在290℃下保温40h后,其维氏硬度可达2 121.49MPa,比热处理前提高了20%左右,并且红外透过率在8~12μm波段仍保持在60%以上.     

Properties and Microstructure of GeS_2-Ga_2S_3-CdS Glasses

1Introduction OsterbergUetal[1]firstlydetectedtheSecond Har monicGeneration(SHG)bythelaser inducedmethodin GeO2SiO2glassfiber,andMyersRAetal[2]observed SHGeffectinSiO2bulkglassesafterpolarizationwitha strongelectronicfield.Sincethenthescholarsalloverthe w…     

Chalcogenide Thermoelectrics Empowered by an Unconventional Bonding Mechanism

Thermoelectric materials have attracted significant research interest in recent decades due to their promising application potential in interconverting heat and electricity. Unfortunately, the strong coupling between the material parameters that determine thermoelectric efficiency, i.e., the Seebeck coefficient, electrical conductivity, and thermal conductivity, complicates the optimization of thermoelectric energy converters. Main‐group chalcogenides provide a rich playground to alleviate the interdependence of these parameters. Interestingly, only a subgroup of octahedrally coordinated chalcogenides possesses good thermoelectric properties. This subgroup is also characterized by other outstanding characteristics suggestive of an exceptional bonding mechanism, which has been coined metavalent bonding. This conclusion is further supported by a map that separates different bonding mechanisms. In this map, all octahedrally coordinated chalcogenides with good performance as thermoelectrics are located in a well‐defined region, implying that the map can be utilized to identify novel thermoelectrics. To unravel the correlation between chemical bonding mechanism and good thermoelectric properties, the consequences of this unusual bonding mechanism on the band structure are analyzed. It is shown that features such as band degeneracy and band anisotropy are typical for this bonding mechanism, as is the low lattice thermal conductivity. This fundamental understanding, in turn, guides the rational materials design for improved thermoelectric performance by tailoring the chemical bonding mechanism.     

Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials

Phase‐change alloys are the functional materials at the heart of an emerging digital‐storage technology. The GeTe‐Sb₂Te₃ pseudo‐binary systems, in particular the composition Ge₂Sb₂Te₅ (GST), are one of a handful of materials which meet the unique requirements of a stable amorphous phase, rapid amorphous‐to‐crystalline phase transition, and significant contrasts in optical and electrical properties between material states. The properties of GST can be optimized by doping with p‐block elements, of which Bi has interesting effects on the crystallization kinetics and electrical properties. A comprehensive simulational study of Bi‐doped GST is carried out, looking at trends in behavior and properties as a function of dopant concentration. The results reveal how Bi integrates into the host matrix, and provide insight into its enhancement of the crystallization speed. A straightforward explanation is proposed for the reversal of the charge‐carrier sign beyond a critical doping threshold. The effect of Bi on the optical properties of GST is also investigated. The microscopic insight from this study may assist in the future selection of dopants to optimize the phase‐change properties of GST, and also of other PCMs, and the general methods employed in this work should be applicable to the study of related materials, for example, doped chalcogenide glasses.