带曲率补偿的带隙基准电流源的设计

简单介绍了带隙基准源的基本原理,给出了一款基于Widlar结构的带曲率补偿的带隙基准电压电流源的设计方法,通过采用TSMC₀.5μm工艺库对电路进行仿真,在-40～150℃的温度范围内,其带隙基准的输出具有12ppm/℃的温度系数,电流基准的输出具有42ppm/℃。此外,文中还对曲率补偿电路的工作原理进行了分析,并且通过仿真波形对曲率补偿的工作机制进行了讨论。     

陶瓷基光子晶体的研究进展

采用以陶瓷材料为母体制备光子晶体是光子晶体制备的一个重要研究发展方向.本文介绍了陶瓷基光子晶体的几种主要的制备方法以及光子晶体在微波和红外、可见光频段中的应用.基于功能陶瓷所具有丰富的光/电功能可以制备陶瓷基光子晶体,文中介绍了可调带隙光子晶体和光子晶体中自发辐射方面的一些研究成果.陶瓷基光子晶体由于具有折射率高,功能广泛,制备手段多样等特点,因而具有广泛的应用前景,如用作电场调节的光开关和在显示领域中基于光子晶体各向异性发光特点的具有定向光发射性能的光源.     

气体压强对非晶InGaAs薄膜光学常数的影响

论述一种用透射谱包络线法计算非晶薄膜的折射率、消光系数和光学带隙的方法。通过正交实验确定除压强之外的工艺参数,研究压强的改变对薄膜主要光学常数的影响,运用最小二乘法、内插值法在matlab编程基础上,拟合出光学常数曲线,借由观察曲线的特点,分析在低工作气压下,气压的改变对光学常数的影响。     

二维全息光子晶体禁带展宽方法

讨论了二维复周期全息光子晶体禁带展宽的方法,二维复周期全息光子晶体可以使禁带成倍展宽.此外发现二维全息光子晶体中,除原来预期的禁带外,还出现了附加的禁带.当记录光波的入射角小于某个临界值,并且满足一定数值时,附加的禁带会使二维禁带进一步展宽;而当入射角超过临界值时,禁带会消失,这时禁带反而会变窄.这一现象对制作二维宽带隙光子晶体具有指导意义.     

含负折射率介质的一维光子晶体的带隙结构

提出了用正、负折射率介质层交替排列构成的一维光子晶体模型,并且用传输矩阵法计算了该模型的透射谱,从理论上分析了其带隙结构。发现负折射率介质层的引入导致了奇异的带隙特性:禁带很宽,禁带宽度2△ε／ε0趋于2,导带为没有振荡的尖锐峰;禁带宽度对折射率对比度和周期数的变化非常敏感。     

Acceptor-rich bulk heterojunction polymer solar cells with balanced charge mobilities

In this work, we reported efficient polymer solar cells with balanced hole/electron mobilities tuned by the acceptor content in bulk heterojunction blend films. The photovoltaic cells were fabricated with two new wide band-gap D-A polymers PBDDIDT and PBDDIDTT as the donor material. The molecular conformations of new polymers are carefully evaluated by theoretical calculations. The results of photovoltaic studies show that two devices reach their optimal conditions with rich PC₇₁BM content up to 80% in blend films, which is uncommon with most of reported PSCs. The as-cast devices based on PBDDIDT and PBDDIDTT reveal good photovoltaic performance with PCE of 7.04% and 6.40%, respectively. The influence of PC₇₁BM content on photovoltaic properties is further detailed studied by photoluminescence emission spectra, charge mobilities and heterojunction morphology. The results exhibit that more efficient charge transport between donor and acceptor occurs in rich PC₇₁BM blend films. Meanwhile, the hole and electron mobilities are simultaneously enhanced and afford a good balance in rich PC₇₁BM blend films (D/A, 1:4) which is critical for the improvement of current density and fill factors.     

一种基于基板缺陷的共面波导电磁带隙结构

提出了一种通过湿法腐蚀实现的基板缺陷共面波导电磁带隙结构,并进行了建模仿真、加工和测试.重点研究了基板缺陷结构与传统金属缺陷结构的差异,以及采用湿法腐蚀工艺的优势.实验结果显示:新结构具有明显的电磁带隙特性;与干法刻蚀工艺相比,采用湿法腐蚀工艺加工可以获得更宽的阻带范围和更强的阻带抑制.该结构完整保留了50 Ω共面波导的信号线和接地板金属,可以与传统的金属缺陷结构结合,以获得性能更好的器件.     

Novel wide band-gap polymer utilizing fused hetero-aromatic unit for efficient polymer solar cells and field-effect transistors

Novel wide band-gap polymer of PBTFT containing dibenzosexithiophene-alt-bithiophene backbone was designed and synthesized via the Stille cross-coupling reaction. This polymer exhibited good thermal stability, well coplanar backbone and a broad absorption band from 350 nm to 610 nm with a wide optical band-gap of 2.02 eV. The polymer solar cells (PSCs) based on the PBTFT:PC₇₁BM active layer showed the power conversion efficiency of 3.0% with an open circuit voltage of 0.70 V, a short-circuit current of 7.94 mA cm⁻² and a fill factor of 53.98% under the illumination of AM.1.5, 100 mW cm⁻². Holes mobility up to 0.028 cm² V⁻¹ s⁻¹ with an on-off ratio of 1.0 × 10⁶ was obtained in the PBTFT-based organic field-effect transistors (OFETs). Our work indicates that the dibenzosexithiophene-alt-bithiophene based copolymer can be efficiently applied in PSCs and OFETs.     

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Abstract

Spatially and spectrally resolved low-energy cathodoluminescence (CL) microscopy was applied to the characterization of nanostructures. CL has the advantage of revealing not only the presence of luminescence centers but also their spatial distribution. The use of electrons as an excitation source allows a direct comparison with other electron-beam techniques. Thus, CL is a powerful method to correlate luminescence with the sample structure and to clarify the origin of the luminescence. However, caution is needed in the quantitative analysis of CL measurements. In this review, the advantages of cathodoluminescence for qualitative analysis and disadvantages for quantitative analysis are presented on the example of nanostructures.     

一种自偏置低压共源共栅带隙基准电路设计

随着CMOS工艺的发展,器件尺寸逐渐缩小,短沟道效应的影响日益突出。共源共栅电流源可以很好地抑制小尺寸效应,但其消耗的电压余度较大,偏置电路设计繁琐。因此介绍了一种采用自偏置低压共源共栅电流源的带隙基准电路结构,用两个电阻代替了偏置电路。仿真结果显示,该带隙基准电路的最低电源电压约为2.98V,相对于普通的共源共栅结构,降低了2个MOSFET阈值电压;工作在最低电源电压下,功耗约为270μW,相对于带偏置电路的结构,降低约75μW。仿真结果证明,该电路能够简化共源共栅电路的设计和调试,并减少低压共源共栅电路的功耗。