Flower‐shaped ultra‐wideband fractal antenna

A flower‐shaped ultra‐wideband fractal antenna is presented. It comprises a fourth iterative flower‐shaped radiator, asymmetrical stub‐loaded feeding line, and coplanar quarter elliptical ground planes. A wide operating band of 12.12 GHz (4.58‐16.7 GHz) for S ₁₁ ≤ ? 10 dB is achieved along with an overall antenna footprint of 15.7 × 11.4 mm². In addition, other desirable characteristics, that is, omnidirectional radiation patterns, peak gain upto 5 dB, and fidelity factor more than 75% are achieved. A good agreement exists between the simulation and measured results. The obtained results illustrate that this antenna has wide operating range and compact dimensions than available structures.     

共面波导(CPW)馈电单极子天线的设计与研究

给出一种工作于900MHz的共面波导(CPW)馈电单极子天线的设计。该单极子天线以共面波导的中心导带为辐射单极子，以中心导带两边的金属导体作反射板，结构简单紧凑。但是由于天线与共面波导之间缺少有效的隔离，造成天线性能受共面波导尺寸的影响较严重。本文通过模拟计算和实验测量详细分析了共面波导尺寸的变化对天线性能的影响，给出了结合共面波导尺寸设计的工作在900MHz的单极子天线结构数据。     

共面波导有限金属厚度效应的研究

用保角变换法对共面波导金属厚度效应进行了理论分析，编制了相应的计算机程序，给出了数值解，并对此进行了多元曲线拟合，导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解，并与K．C．格普塔的修正值及实验测量值进行了详细比较，结果表明此修正公式与实验值相符较好。     

A compact asymmetric slot dual band antenna fed by CPW for PCS and UWB applications

A compact slot antenna with an overall dimension of 30 × 30 × 1.6 mm³ is proposed for dual band applications. The radiating element is a hexagonal shape patch which protrudes from a Co‐Planar Waveguide (CPW) feed into a step shape slot. The slot is basically rectangular in shape and is extended by inserting rectangular cuts of different sizes on the ground plane around it. The ultrawide impedance bandwidth is achieved using asymmetric feed line along with extended rectangular cuts around the slot. For realizing the second band for personal communication system applications (near 1.9 GHz), a metallic stub of quarter wave length is attached at the top of the slot. The measured impedance bandwidth (for S₁₁ < ?10 dB) is 110 MHz (1.86–1.97 GHz) for the first band and 9 GHz (3.0–12.0 GHz) for the second band. The antenna is further characterized by omnidirectional radiation patterns in the H‐plane, dumb‐bell shape radiation patterns in the E‐plane and a peak gain of 3–5 dBi over the ultrawideband. All the measured results are found to be in good agreement with the simulated results. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:243–254, 2015.     

薄衬底共面波导的特性分析

本文推导出了薄衬底共面波导特性参数计算的近似解析表达式,避免了薄衬底保角变换中的"拥挤现象".利用该表达式并结合部分电容法可以计算在导体与衬底之间加薄绝缘层的共面波导的特性参数,分析结果与实验数据相符合.最后还对有薄绝缘层的硅衬底共面波导的损耗因子进行了分析.     

一种新型MEMS可调滤波器的设计

提出了一种采用非均匀分布MEMS结构的可调滤波器设计方案。基于这种新型结构,讨论了一个中心频率为20GHz的二阶带通可调滤波器模型。通过HFSS对该二阶带通滤波器模型进行了全波分析。仿真结果表明:通过分别改变共面波导结构上方不同部分的MEMS电容高度,该滤波器中心频率在18.71~20.62GHz连续可调,相应的3dB带宽值为2.36GHz和2.94GHz。该滤波器9.5%的可调率相比于同类型均匀分布式滤波器的可调范围增加了大约18.6%(300MHz)。通过分析可知,采用非均匀分布MEMS结构的可调滤波器不仅结构更紧凑合理,而且获得了比均匀结构更大的调节范围,极大地增加了设计的灵活性。     

A micromachining technology for integrating low-loss GHz RF passives on non-high-resistivity low-cost silicon MCM substrate

A micromachining technology for integrating high-performance radio-frequency (RF) passives on CMOS-grade low-cost silicon substrates is developed. The technology can form a thick solid-state dielectric isolation layer on silicon substrate through high-aspect-ratio trench etch and refill. On the non-high-resistivity but low-loss substrate, two metal layers with an inter-metal dielectric layer are formed for integrating embedded RF components and passive circuits. Using the technology, two types of integrated RF filters are fabricated that are band-pass filter and image-reject filter. The band-pass filter shows measured minimum insertion loss of 3.8 dB and return loss better than 15 dB, while the image-reject filter exhibits steeper band selection and achieves better than −30 dB image rejection. A 50 Ω co-planar waveguide (CPW) on the substrate is also demonstrated, showing low loss and low dispersion over the measured frequency range up to 40 GHz. The developed technology proves a viable solution to implementing silicon-based multi-chip modules (MCM) substrates for RF system-in-package (RF-SiP).     

一种新型微波光子器件--多量子阱光-微波转换器的设计构想

最近十年,微波光子领域的研究在世界范围内吸引了越来越多的兴趣,作为微波光子器件系列的光-微波转换器,扮演了重要的角色。本文提出了一种新型的多量子阱超宽带光-微波变换器的设计构想,介绍了其结构、功能并进行了分析。     

用单平面技术设计5.8GHz的双相调制器／混频器

根据单平面技术将多功能子系统分为基本块和简单电路模型的设计方法，用于设计单平面的双相调制器/混频器，主要用于智能交通收费系统的微波非接触式ID卡中，其工作频率为5.8GHz，采用电磁场计算与传统传输线及计算机辅助设计相结合的方法分析设计了该子系统的主要部件，使其具有尺寸小、集成度高、结构紧凑、性能好、成本低、易于加工等优点。     

27.5GHz 0.2μm PHEMT1∶4静态分频器

描述了一种能运用于未来光传输系统SONETOC768的超高速1∶4静态分频器,其工作频率超过27GHz.该电路采用栅长为0.2μm,截止频率约为60GHz的砷化镓赝晶高电子迁移率晶体管工艺制作,采用共面波导作为电感实现了宽带阻抗匹配.通过采用推拉式有源跟随器,在没有增加功耗的情况下拓宽了频带.单端输入和差分信号输出的方式,为实际应用提供了便利.通过晶圆测试,在单端时钟输入的情况下,芯片的最高工作频率超过27GHz.测试所得到的波形均方根抖动小于820fs.芯片的面积是1.6mm×0.5mm,功耗为440mW.