Semiconductor manufacturing: an introduction to processes and hazards

Recent studies suggest that semiconductor workers have an increased incidence of work-related illness. Semiconductor manufacturing is a chemically intensive industry involving many potentially hazardous operations. As this industry moves into new geographic areas, health care professionals will be asked to evaluate medical or workplace conditions associated with unfamiliar and complex production processes. This paper provides an overview of semiconductor manufacturing processes for these health practitioners. Each step of device fabrication is detailed with its attendant chemical and physical hazards. Broader concepts of industrial control technology, clean room ventilation, and ergonomics are explained. The hazards are tabulated to allow rapid assessment of the risks inherent to each processing step. References have been chosen to guide the reader to more indepth information.     

生物功能化半导体量子点对活细胞内蛋白质分子可视化的研究进展

半导体量子点(或称半导体纳米微晶体)具有独特的光谱特性和良好的光化学稳定性。通过改变量子点的材料或粒径大小可在同一波长光激发下获得从紫外到近红外(或从蓝色到红色)波长范围内任意点的发射光谱。随着近年来生物亲和性功能化纳米技术的发展,为半导体量子点用于多通道、高通量对活细胞内蛋白质分子直接观察研究这一国际未解决的难题提供了可能。概述了生物功能化半导体量子点在活细胞生理条件对蛋白质分子进行可视化研究的最新进展,评价了其作为荧光探针对活细胞蛋白质分子进行实时动态研究的发展前景。     

半导体激光穴位照射的镇痛作用及其机制初探

目的　探讨半导体激光穴位照射镇痛效应及其镇痛的机制。方法　大鼠随机分成照射组、模拟照射组和纳洛酮预处理组。采用半导体激光照射大鼠“足三里”穴位 ,用电刺激鼠尾 -嘶叫法测定激光照射前后的痛阈。结果　照射后大鼠的痛阈明显提高 ,这种镇痛作用可被纳洛酮预处理所翻转。结论　半导体激光穴位照射产生镇痛效应机制可能与激光照射促进内源性阿片物质释放有关。     

半导体量子点-Smad2单克隆抗体荧光探针的制备及其相关性质检测

目的制备半导体量子点-Smad2单克隆抗体荧光探针（QDs-Smad2单抗荧光探针）,并对其相关光学性质和特异免疫性识别能力进行检测。方法1）用半导体量子点和Smad2单克隆抗体通过化学偶联法制备水溶性的QDs-Smad2单抗荧光探针并纯化;2）用紫外分光光度计和荧光分光光度计分别测定QDs-Smad2单抗荧光探针的吸收光谱、发射光谱,在激光共聚焦显微镜下观察并检测QDs-Smad2单抗荧光探针的形态、荧光强度和光化学稳定性;3）转化生长因子-β1（TGF-β1）和大鼠牙乳头细胞共同孵育24 h后,采用SP免疫细胞化学法和QDs-Smad2单抗荧光探针直接免疫荧光成像法观察比较Smad2信号蛋白分子在大鼠牙乳头细胞内的分布,并检测细胞内QDs-Smad2单抗荧光探针的相关光学性质。结果半导体量子点与Smad2单抗通过共价结合形成稳定的QDs-Smad2单抗荧光探针,QDs-Smad2单抗荧光探针对大鼠牙乳头细胞内Smad2分子具有特异性的识别能力;QDs-Smad2单抗荧光探针仍具有QDs所具有的激发光谱宽,发射光谱窄,荧光度强,光化学稳定性好等优良光学特征。结论生物修饰的半导体量子点和单克隆抗体通过共价结合形成纳米分子探针后仍具有特异免疫识别能力和量子点独特的光学性质,这为半导体量子点用于活细胞内对蛋白质分子进行实时、原位、长时间动态可视化检测提供了科学基础和依据。     

The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors

Pure CuI and Zn-substituted CuI (CuI:Zn) semiconductor thin films, and metal-semiconductor-metal (MSM) photodetectors were fabricated on glass substrates by a low-temperature solution process. The influence of Zn substitution concentration (0–12 at%) on the microstructural, optical, and electrical characteristics of CuI thin films and its role in improving the optoelectronic performance of CuI MSM photodetectors were investigated in this study. Incorporation of Zn cation dopant into CuI thin films improved the crystallinity and increased the average crystalline size. XPS analysis revealed that the oxidation state of Cu ions in all the CuI-based thin films was +1, and the estimated values of [Cu]/[I] for the CuI:Zn thin films were lower than 0.9. It was found that the native p-type conductivity of polycrystalline CuI thin film was converted to n-type conductivity after the incorporation of Zn ions into CuI nanocrystals, and the electrical resistivity decreased with increases in Zn concentration. A time-resolved photocurrent study indicated that the improvements in the optoelectronic performance of CuI MSM photodetectors were obtained through the substitution of Zn ions, which provided operational stability to the two-terminal optoelectronic device. The 8 at% Zn-substituted CuI photodetectors exhibited the highest response current, responsivity, and EQE, as well as moderate specific detectivity.     

Fabrication and Characteristics of a Conductive FeCo@Au Nanowire Alloy for Semiconductor Test Socket Connectors

The most promising approach for improving the electrical performance of connectors used in semiconductor test sockets involves increasing their electrical conductivity by incorporating one-dimensional (1D) conductive materials between zero-dimensional (0D) conductive materials. In this study, FeCo nanowires were synthesized by electroplating to prepare a material in which 1D materials could be magnetically aligned. Moreover, the nanowires were coated with highly conductive Au. The magnetization per unit mass of the synthesized FeCo and FeCo@Au nanowires was 167.2 and 13.9 emu/g, respectively. The electrical performance of rubber-based semiconductor connectors before and after the introduction of synthetic nanowires was compared, and it was found that the resistance decreased by 14%. The findings reported herein can be exploited to improve the conductivity of rubber-type semiconductor connectors, thereby facilitating the development of connectors using 0D and 1D materials.     

Fabrication of Large-Area Mullite–Cordierite Composite Substrates for Semiconductor Probe Cards and Enhancement of Their Reliability

This work aims to fabricate a large-area ceramic substrate for the application of probe cards. Mullite (M) and cordierite (C), which both have a low thermal expansion coefficient, excellent resistance to thermal shock, and high durability, were selected as starting powders. The mullite–cordierite composites were produced through different composition ratios of starting powders (M:C = 100:0, M:C = 90:10, M:C = 70:30, M:C = 50:50, M:C = 30:70, and M:C = 0:100). The effects of composition ratio and sintering temperature on the density, porosity, thermal expansion coefficient, and flexural strength of the mullite–cordierite composite pellets were investigated. The results showed that the mullite–cordierite composite pellet containing 70 wt% mullite and 30 wt% cordierite sintered at 1350 °C performed exceptionally well. Based on these findings, a large-area mullite–cordierite composite substrate with a diameter of 320 mm for use in semiconductor probe cards was successfully fabricated. Additionally, the changes in sheet resistance and flexural strength were measured to determine the effect of the environmental tests on the large-area substrate such as damp heat and thermal shock. The results indicated that the mullite–cordierite composite substrate was extremely reliable and durable.     

半导体激光经巩膜睫状体光凝术治疗难治性青光眼

目的：评价半导体激光经巩膜睫状体光凝术治疗难治性青光眼的临床疗效和安全性。
　　方法：回顾性分析2012－03／2013－03到我院眼科就诊33例33眼难治性青光眼患者临床资料,所有患者均行半导体激光经巩膜睫状体光凝术,激光能量1000～3000 mW,时间2000～3000ms,击射范围270°～360°,击射点20～40点。随访观察并记录患者临床症状、视力、眼压、眼前节及并发症,随访时间为6 mo。
　　结果：最后随访时32例（97％）的患者眼部症状明显缓解或消失;术前平均眼压为50．26±9．37mmHg,最后随访6mo时平均眼压下降为18．38±8．73mmHg,治疗前后眼压具有统计学意义（P＜0．05）。2例（6％）术后3mo时眼压再次升高,给予再次激光治疗,术后并发症为前房炎症反应9例（27％）,前房出血5例（15％）,结膜下出血2例（6％）,结膜充血水肿12例（36％）,眼球萎缩1例（3％）。结论：半导体激光经巩膜睫状体光凝术治疗难治性青光眼是一种简便、降压显著、痛苦小、安全有效的方法。     

半导体激光照射联合药物及护理治疗老龄重症患者Ⅱ－Ⅲ期褥疮的疗效观察

目的：探讨半导体激光照射联合药物治疗及护理治疗Ⅱ－Ⅲ期褥疮的疗效。方法：将40例外院带入褥疮的老龄重症患者随机分成试验组和对照组,各20例。对照组按内科护理常规,清洁创面后盐酸左氧氟沙星眼用凝胶;试验组清创后每天用半导体激光照射褥疮表面20min,用盐酸左氧氟沙星眼用凝胶涂于患处,再用人工细胞愈合膜涂于患处,并给予有针对性的护理干预。结果：治疗4周后观察褥疮愈合情况。对照组有效率为69．8％,试验组有效率为90．1％。两组差异比较（P＜0．05）,有统计学意义。半导体激光联合药物治疗及护理有利于Ⅱ－Ⅲ期于褥疮的肉芽组织生长和上皮爬行,促进褥疮创面愈合,并缩短了褥疮愈合时间。     

半导体激光联合5-氟尿嘧啶治疗牙龈瘤疗效分析

目的　探讨半导体激光联合5-氟尿嘧啶治疗牙龈瘤的临床疗效。 方法    选择2017年1月至2018年6月于深圳市人民医院口腔医学中心就诊的牙龈瘤患者38例, 随机分为单纯半导体激光手术治疗组（激光组）和半导体激光联合5-氟尿嘧啶治疗组（激光联合5-氟尿嘧啶组）,每组19例。术后随访12个月,比较两组的治愈率和复发情况。结果　激光联合5-氟尿嘧啶组治愈19例,治愈率为100%;激光组治愈15例,复发4例,治愈率为78.9%;两组治愈率差异有统计学意义（P = 0.035）。38例患者术后病理结果：血管型26例,纤维型8例,肉芽肿型 4例。结论　牙龈瘤具有复发倾向,应用半导体激光照射联合5-氟尿嘧啶局部注射,治疗效果好且可明显降低复发率,值得临床推广。