首页 | 官方网站   微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   5579篇
  免费   579篇
  国内免费   447篇
工业技术   6605篇
  2024年   21篇
  2023年   75篇
  2022年   134篇
  2021年   180篇
  2020年   188篇
  2019年   169篇
  2018年   146篇
  2017年   249篇
  2016年   259篇
  2015年   257篇
  2014年   388篇
  2013年   392篇
  2012年   479篇
  2011年   515篇
  2010年   314篇
  2009年   332篇
  2008年   273篇
  2007年   369篇
  2006年   317篇
  2005年   263篇
  2004年   216篇
  2003年   187篇
  2002年   145篇
  2001年   133篇
  2000年   127篇
  1999年   94篇
  1998年   76篇
  1997年   44篇
  1996年   67篇
  1995年   39篇
  1994年   39篇
  1993年   19篇
  1992年   24篇
  1991年   18篇
  1990年   9篇
  1989年   13篇
  1988年   11篇
  1987年   3篇
  1986年   5篇
  1982年   2篇
  1981年   3篇
  1980年   2篇
  1979年   3篇
  1977年   1篇
  1976年   1篇
  1959年   3篇
  1951年   1篇
排序方式: 共有6605条查询结果,搜索用时 15 毫秒
1.
Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.  相似文献   
2.
This paper reports an investigation on the structure-properties correlation of trivalent metal oxide (Al2O3)-doped V2O5 ceramics synthesized by the melt-quench technique. XRD patterns confirmed a single orthorhombic V2O5 phase formation with increasing strain on the doping of Al2O3 in place of V2O5 in the samples estimated by Williamson-Hall analysis. FTIR and Raman investigations revealed a structural change as [VO5] polyhedra converts into [VO4] polyhedra on the doping of Al2O3 into V2O5. The optical band gap was found in a wide semiconductor range as confirmed by UV–visible spectroscopy analysis. The thermal and conductivity behavior of the prepared samples were studied using thermal gravimetric analysis (TGA) and impedance analyzer, respectively. All the prepared ceramics exhibit good DC conductivity (0.22–0.36 Sm-1) at 400 ?C. These materials can be considered for intermediate temperature solid oxide fuel cell (IT-SOFC)/battery applications due to their good conductivity and good thermal stability.  相似文献   
3.
杨宽  阎昌琪  曹夏昕 《化工学报》2020,71(7):3060-3070
采用去离子水作为实验工质,在低压低流速自然循环工况下开展了单面加热可视化窄矩形通道内的过冷沸腾摩擦阻力特性实验研究。实验中测量了实验段内的压降数据,并通过高速摄影仪拍摄了窄矩形通道内的气液两相图像,提出了过冷沸腾条件下的两相摩擦压降的剥离计算方法。基于本实验中获得摩擦压降数据,对分别基于均相流模型和分液相模型的经典两相摩擦压降计算关系式进行了评估,实验结果表明:采用不同等效黏度计算方法的均相流模型计算结果比实验值明显偏小;而分相流模型中,Sun and Mishiba关系式和Tran关系式均能够较好地预测摩擦阻力,计算值与实验值的平均相对偏差在±15%以内。结合实验数据,以分相流模型方法为基础,考虑全液相Reynolds数、Martinelli参数和Laplace数的影响,获得了计算分液相折算系数的经验关系式,与实验数据符合较好, 平均相对误差在10%范围内。  相似文献   
4.
Eigensolutions of {X( = C,B,N),Y( = C,B,N)}-cyclacene graphs with next nearest neighbor (nnn) interactions have been obtained in analytical forms by adapting n-fold rotational symmetry followed by two-fold rotational symmetry (or a plane of symmetry). Expressions of eigensolution indicate the subspectral relationship among such cyclacenes with an even number of hexagonal rings e.g., eigenvalues of {X,Y}-di-cyclacene are found in the eigenspectra of all such even cyclacenes. Total π-electron energies and highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO–LUMO) gaps are calculated using the analytical expressions obtained and are found to vary negligibly with the variation of nnn interactions in such cyclacenes. Total π-electron energy is found to increase due to increase in restriction intensity of nnn interactions, whereas the HOMO–LUMO gap of polyacenecs having the even number of hexagonal rings and with one electron at each site (atom) decreases with increase in the restriction intensity since such systems contain degenerate half-filled HOMO (bonding or nonbonding) that are much more vulnerable for perturbations imposed through nnn interactions.  相似文献   
5.
Connexin- and pannexin (Panx)-formed hemichannels (HCs) and gap junctions (GJs) operate an interaction with the extracellular matrix and GJ intercellular communication (GJIC), and on account of this they are involved in cancer onset and progression towards invasiveness and metastatization. When we deal with cancer, it is not correct to omit the immune system, as well as neglecting its role in resisting or succumbing to formation and progression of incipient neoplasia until the formation of micrometastasis, nevertheless what really occurs in the tumor microenvironment (TME), which are the main players and which are the tumor or body allies, is still unclear. The goal of this article is to discuss how the pivotal players act, which can enhance or contrast cancer progression during two important process: “Activating Invasion and Metastasis” and the “Avoiding Immune Destruction”, with a particular emphasis on the interplay among GJIC, Panx-HCs, and the purinergic system in the TME without disregarding the inflammasome and cytokines thereof derived. In particular, the complex and contrasting roles of Panx1/P2X7R signalosome in tumor facilitation and/or inhibition is discussed in regard to the early/late phases of the carcinogenesis. Finally, considering this complex interplay in the TME between cancer cells, stromal cells, immune cells, and focusing on their means of communication, we should be capable of revealing harmful messages that help the cancer growth and transform them in body allies, thus designing novel therapeutic strategies to fight cancer in a personalized manner.  相似文献   
6.
Abstract

The performance of electrical discharge machining (EDM) primarily depends on the spark quality generated in the inter-electrode gap (IEG) between the tool and workpiece. A method for obtaining accurate information about the spark gap is required to effectively monitor the EDM process. The rise and fall of thermal energy in the discharge zone at a rapid rate during the dielectric breakdown produces high-pressure shock waves. This work explores the suitability of using acoustic emission (AE) generated from these shock waves and the elastic AE waves released on the workpiece due to the induced stress to monitor the performance and spark gap in EDM. The information content of the AE signals acquired at various machining conditions was extracted using AE RMS, spectral energy and peak amplitude. These features were able to well discriminate the machining condition, tool material, workpiece material, flushing pressure, current density, the initial surface roughness of the tool. Additionally, the AE signal features had a good and consistent correlation with the performance parameters, including material removal rate, surface roughness (Ra and Rq) and tool wear. The findings lay the groundwork to develop an effective, non-intrusive in-situ AE-monitoring system for performance and IEG condition in EDM.  相似文献   
7.
介绍集中解决超短波水文自动测报系统抗干扰问题的方法,重点推荐一种空腔窄带滤波器。  相似文献   
8.
1 IntroductionMaterialswithPhotonicBandGaps (PBG’s)havebeenwidelystudiedboththeoreticallyandex perimentallyinthepastfew years[1~ 4] .Theexis tenceofgaps,which prohibitthepropagationofelectromagnetic (EM )wavesinacertainrangeoffrequencies,canhavesignificantimpactsbothinsci enceandtechnology .Manypracticalapplicationsofthesestructureshavebeensuggestedanddemon strated ,suchasPhotonicCrystal (PC)microcavi ties[5] ,infraredPC[6] ,PClens[7] ,suppressingspontaneousemission ,manipulatinglight…  相似文献   
9.
低插损窄带型10.7MHz压电陶瓷滤波器的研制   总被引:3,自引:0,他引:3  
介绍了低插损窄带型10.7 MHz压电陶瓷滤波器的一种设计制作方法。结合压电陶瓷能陷模理论,通过对滤波器分割电极设计和制造工艺控制技术的研究,强调了工艺控制的重要性。产品达到日本村田同类产品水平,对国产化窄带型10.7 MHz压电陶瓷滤波器的研发和生产具有十分重要的意义。认为选用高Qm值压电陶瓷材料、分割电极和耦合电容的设计、焊接和点蜡工艺的控制等是研制低插损窄带型10.7 MHz压电陶瓷滤波器的重点。  相似文献   
10.
We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (Tsub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH4 in the gas phase (relative to the total GeH4+SiH4 flow).  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号