Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms.     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

液晶显示器生产中的激光退火和缺陷修复

由于在大面积玻璃基底上制备由多层材料构成的高质量薄膜晶体管象元驱动阵列工艺的复杂性，使有源矩阵液晶显示器（AMLCD）的成品率低、价格高。利用激光对AMLCD进行非晶硅薄膜的退火和电路缺陷的修复，可有效的改善AMLCD的性能，提高成品率和降低成本。本文在介绍了激光对非晶硅薄膜退火和电路缺陷修复常用激光器的特性后，讨论了激光对不同类型缺陷修复的原理和过程。最后，分析比较了不同类型激光退火方法的特点。     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

基于栅格法-模拟退火法的机器人路径规划

路径规划是机器人技术中的重要组成部分,分全局路径规划和局部路径规划。本文将栅格法与模拟退火法结合,采用栅格法表示环境信息。局部路径规划主要基于模拟退火法,使路径跳出局部极小点,到达目标位置。     

A force modulation study on crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films

This paper introduces the Force Modulation technique to the study of crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films. Using this technique we have successfully visualized ferroelectric crystalline domains and observed that these ferroelectric domains grow out from amorphous phase, unite into strip-like structures, and finally congregate into a union. Force Modulation can weaken the influence of topography on imaging of ferroelectric domains, and reveal more details, which are difficult to be observed in topographical image.     

Computer modeling of the continuous annealing furnace

A computer program to calculate the strip temperature heated in the continuous annealing furnace was developed, using the zone method for radiative heat transfer analysis with the measured gas temperature in the furnace. Using theF _E Operator, the present study considered the effects of soot and transient species, in addition to the H₂O−CO₂ gas mixture on the gas radiative heat transfer. The predicted strip temperature distribution forF _E=1.05 represented well the measured data. The maximum difference in the heat flux transfered to the strip from the combustion gas forF _E=1.0 (without soot and transient species gas radiation) and 1.05 (with soot and transient species gas radiation) was about 15%. The present study also investigated the effects of line speed and thickness variations on the strip temperature, establishing the bases for the on-line computer model.     

Analytical characterization of cadmium cyanamide in CdS thin films and bulk precipitates produced from CBD process in pilot plant

CdS thin films and bulk precipitates were obtained by chemical bath deposition (CBD) in a well-closed reactor. X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy, thermal analysis, elemental analysis and leaching have been used to characterize solids and thin films. It has been shown that the proportion of cadmium cyanamide in solids may vary from about 50% to 2% according to physicochemical conditions in solution (time after CBD, ammonia concentration) and that CdO results from CdCN₂ after air annealing of thin films. This last step also increases the crystallinity of the films.     

电脉冲快速退火对铁基非晶合金性能的影响

采用大电流交流脉冲对非晶Ｆｅ７８Ｂ１３Ｓｉ９合金进行了去应力退火。初步探讨了电脉冲加热对加热速率和该合金内应力释放、退火脆化以及最终软磁性影响的基本规律。结果表明：电脉冲加热可以得到远高于常规退火的加热速率，选择合适工艺参数可使非晶合金内应力释放９０％，软磁性（Ｈ＿ｃ和Ｂ＿ｓ）达常规退火后的９５％以上，与此同时使合金的延性（断裂应变ε＿ｆ）维持在０．９以上，从而有望实现非晶合金磁性与延性的合理配合。