Organic‐polymer thin‐film transistors for active‐matrix flat‐panel displays?

Abstract— Organic‐polymer‐based thin‐film transistors (OP‐TFTs) look very promising for flexible, large‐area, and low‐cost organic electronics. In this paper, we describe devices based on spin‐coated organic polymer that reproducibly exhibit field‐effect mobility values around 5 × 10^?3 cm²/V‐sec. We also address fabrication, performance, and stability issues that are critical for the use of such devices in active‐matrix flat‐panel displays.     

库区河道河相关系特性与糙率研究

在实测资料的基础上,对水库库区三角洲河道水力几何形态的特征,沙纹、沙垅的消长,水流阻力的变化及水温对水流阻力的影响等进行了初步分析,建立了沙垅阻力、总阻力、冰期阻力与水流强度间的关系.通过对某水库实测河床形态与阻力资料的检验,这些关系得到比较满意的验证.     

Direct structuring of C60 thin film transistors by photo-lithography under ambient conditions

Direct structuring techniques are an indispensable need for future low-cost applications of organic semiconductor materials in e.g. active matrix displays or integrated circuits. We demonstrate direct structuring of a small molecule organic semiconductor by a photo-lithography lift off process under ambient conditions. To show compatibility of this process, we fabricate organic thin film transistors (OTFT) containing the benchmark electron transporting semiconductor C60 as active material in a top-contact geometry. C60 as electron transporting semiconductor serves as good indicator for contamination and degradation caused by the structuring procedure. To disclose influences of structuring, we discuss the OTFT performance for different channel lengths from 100 μm down to 2.7 μm. In particular, we show that lithography processing gives rise to increased contact resistances. Apart from that, mobility of C60 as material parameter is only weakly affected which underlines the compatibility of the suggested structuring procedure. The potential of this structuring procedure for future integration of driving transistors in active matrix displays is demonstrated.     

Analysis of performance and device parameters of CIGS PV modules deployed outdoors

Two 20 W copper indium gallium diselenide photovoltaic modules were subjected to a thorough indoor assessment procedure, followed by outdoor deployment at the Nelson Mandela Metropolitan University as part of an ongoing study. The initial indoor measurement of maximum power output (P_MAX) of one of the modules was considerably higher than the manufacturer's rating (E.E. van Dyk, C. Radue and A.R. Gxasheka, Thin Solid Films 515 (2007) 6196). The modules were deployed on a dual-axis solar tracker and current-voltage characteristics were obtained weekly. In addition to the normal PV parameters of short-circuit current, open-circuit voltage, P_MAX, fill factor and efficiency, shunt and series resistances were also monitored. The performances of the two modules are compared and analyzed and the results presented in this paper.     

乙内酰脲体系无氰电镀镉工艺

目的开发一种新型的无氰镀镉工艺,替代传统的氰化镀镉。方法以海因和柠檬酸为主、辅络合剂,通过选用光亮剂和表面活性剂获得无氰镀镉工艺配方,优化pH值、电流密度和温度等工艺参数。按规定的方法测试镀液的分散能力、深镀能力。利用SEM、三维显微镜观察镀层的微观形貌,通过极化曲线和循环伏安曲线讨论镀液的极化度和成膜机理,利用塔尔菲尔曲线和点滴实验测试其耐蚀性。结果镉电沉积是通过"成核/生长"机理进行的,乙内酰脲体系无氰镀镉双络合剂协同作用明显,镀液极化能力强。与氰化镀镉相比,该工艺电流效率提高20%,沉积速率提高30%,分散能力可达89%以上,镀液深镀能力和镀层结合力检验合格,镀层表面光亮细致,钝化膜彩虹色明显。无氰镀镉层耐蚀性优于氰化镀镉层,与氰化镀镉钝化层相比,钝化封闭后,自腐蚀电流密度降低至之前的1/15,耐蚀性显著提高。结论该配方及工艺条件为:硫酸镉30～50 g/L,硫酸钠60～100 g/L,乙内酰脲60～70 g/L,柠檬酸20～40 g/L,光亮剂1～3 g/L,表面活性剂1～3g/L,pH=5～6,温度15～35℃。镀液镀层各项性能优越,完全可以替代氰化镀镉工艺用于我国飞机和航空发动机钢结构的防护。     

我国推行电子政务的阻力研究

电子政务一直是近些年的热点问题,90年代后期,特别是进入21世纪后,伴随因特网的迅速发展和政府职能转变的力度加大,我国电子政务建设进入了全面规划、整体发展的新阶段。我国电子政务系统的建设取得了一些成绩,有了一定的效益,但和电子政务内在要求相比,还有不小的差距。差距产生的原因主要在于实施电子政务系统的过程中存在的一些阻力,本文提出并分析了电子政务系统过程中实施的主要阻力,并针对这些阻力,提出了一些建议。     

Mathematical Modeling of Drying Kinetics for Apricots: Influence of the External Resistance to Mass Transfer

The drying curves of halved and deseeded apricots obtained during convective drying at different temperatures (from 50 to 90°C) have been examined, and a diffusional model, solved by a finite elements method, has been proposed to simulate the drying kinetics. The importance of taking into account both the internal and the external resistances to mass transfer when modeling the drying curves is discussed. Due to the geometry of halved apricots as a hemisphere losing water only through the flat section, the mass transfer coefficient (k_c) was not correctly estimated through an empirical correlation. Only the identification of this coefficient from the experimental results allowed an accurate simulation, decreasing the mean relative error from 12.3±3.8% when k_c was calculated through the Pasternak and Gauvin correlation to 2.9±1.0% when k_c was identified.     

Benefit of Microscopic Diffusion Measurement for the Characterization of Nanoporous Materials

Detailed knowledge of the transport properties of nanoporous materials is a prerequisite for their complete characterization and optimum technological exploitation. One of the best ways to attain this information is provided by the “microscopic” techniques of diffusion measurement, in particular by the pulsed field gradient technique of NMR and by interference microscopy and IR microscopy. Starting with the measuring principles, the various types of evidence as accessible by these techniques are illustrated. A large variety of host‐guest systems with both ordered and random pore networks have been studied, from microporous up to macroporous materials. The information obtained concerns diffusivities in the various pore domains, extra resistances at the interfaces between them and the associated exchange rates.     

Corrosion study of SS430/Nb as bipolar plate materials for PEMFCs

Niobium-coated 430 stainless steel (SS430/Nb) specimens were evaluated as possible bipolar plate materials in conditions that resemble a typical PEMFC environment with respect to their interfacial contact resistance (ICR) and corrosion resistance. Results show that SS430/Nb demonstrated to have low ICR values and very good corrosion resistance in comparison with commercial steel and Ni-based alloys. In addition, the ICR values are also comparable with those of graphite.     

A new method of determination of series and shunt resistances of silicon solar cells

A new method of measurement of series resistance R_s and shunt resistance R_sh of a silicon solar cell is presented. The method is based on the single exponential model and utilizes the steady state illuminated I–V characteristics in third and fourth quadrants and the V_oc–I_sc characteristics of the cell. It enables determination of values of R_sh and R_s with the intensity of illumination. For determination of R_s it does not require R_sh to be assumed infinite and realistic values of R_sh can be used. The method is very convenient to use and in the present study it has been applied to silicon solar cells having finite values of R_sh. We have found that R_sh is independent of intensity but the R_s decreases with both the intensity of illumination and the junction voltage.