Tunable structure and intensive upconversion photoluminescence for Ho3+-Yb3+ codoped bismuth titanate composite synthesized by sol-gel-combustion (SGC) method

Ho³⁺ and Yb³⁺ codoped bismuth titanate (BTO) composite powders with infrared to visible upconversion luminescence (UCL) function were prepared by SGC method. The effects of Ho³⁺ and Yb³⁺ doping content on the structure and property were investigated for BTO: xHo, 0.2 Yb (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1) and BTO: 0.02Ho, yYb (y = 0.1, 0.2, 0.3, 0.5, 0.7, 0.9) samples. All the samples include three bismuth titanate phases (Bi₄Ti₃O₁₂, Bi₂Ti₂O₇, and Bi₂₀TiO₃₂), and the phase proportion can be tuned by changing Ho³⁺ and Yb³⁺ doping content. These powders are well crystalized with honeycomb-like microscopic structure, and with good absorption for 233 nm, 310 nm and 975 nm wavelength. The band gap can be tuned from 3.53 eV to 4.03 eV when increasing Yb³⁺ content from y = 0 to y = 0.9. A strong 530–580 nm green emission band and a relative weak 630–690 nm red one corresponding to Ho³⁺: ⁵S₂ → ⁵I₈ and ⁵F₅ → ⁵I₈ transitions appear in the UCL spectra for all the BTO: Ho, Yb samples when pumped at 980 nm. The emission intensities can well be tuned with various Ho³⁺ and Yb³⁺ content. The optimal UCL was obtained in BTO: 0.02Ho, 0.5 Yb for all the prepared samples. The energy transfer mechanism is analyzed by building a two-photon energy transfer model, which is proved by the relationship between emission intensities and pumping power measurement. The concentration quenching of Ho³⁺ is caused by cross relaxation of CR₁ and CR₂ (Ho: ⁵F₄, ⁵S₂ + ⁵I₈ → ⁵I₄ + ⁵I₇) and by CR₃ (Ho: ⁵F₄, ⁵S₂ + Yb: ²F_7/2 → Ho: ⁵I₆ + Yb: ²F_5/2) for Yb³⁺ quenching. The mean luminescence lifetime (τ_m) from Ho: ⁵S₂ decreases monotonously with the increase of Ho³⁺ and Yb³⁺ content.     

Kinetics of light-induced degradation in compensated boron-doped silicon investigated using photoluminescence and numerical simulation

We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing model of the slowly generated defect SRC, where its saturated concentration is a function of the majority carrier concentration, does not explain certain results in both p- and n-type samples. A new model is proposed in which the saturated SRC concentration is controlled by the total hole concentration under illumination.     

A new mechanoluminescence phosphor Na3Sc2(PO4)3:Eu2+: Phase transition-assisted defect formation in a polymorphic composition

A new mechanoluminescent phosphor was developed from a sodium (Na) superionic conductor (NASICON)-structured Na₃Sc₂(PO₄)₃:Eu²⁺ phosphor that is known for its self-healing properties. The compound that crystalized assuming monoclinic C2/c symmetry was found to be blue-emitting, with no noticeable persistent luminescence. Thermoluminescence analysis showed that the phosphor had two prominent distinct thermal emission bands corresponding to the high-temperature β- and γ-phases of the composition. The mechanoluminescence properties of the material that does not have any persistent luminescence at room temperature were investigated by imparting impulsive strain. The compound on charging with 365 nm radiation was found to have significant mechanoluminescent emission originating from shallow defects present in the β-phase of composition that formed by the stress-induced phase transition process. Its emission characteristics and temporal behavior were investigated by varying the impact velocity.     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

Identification of photoluminescence features of an epoxy resin based on components features and curing effects

Photoluminescence features in a commercial grade cured DGEBA-based epoxy resin have been investigated with as objective to determine which of the material compounds are responsible for cured resin emissions. The origin of the bands has been approached by considering photoluminescence of base resin and hardener taken separately, of their mixture, and in the course of curing. Most of the bands observed in the cured resin could be interpreted based on those found in the components taken separately. Fluorescence of the cured resin appears dominated by two broad bands that are characteristic of the hardener and exhibits a blue shift by up to 30 nm in the course of curing which could be used for cure monitoring purpose of the investigated system. Fluorescence of the base resin is clearly detected in the resin cured with tertiary amine as catalyser. However, it is very weak if the catalyser is not added. Two phosphorescence processes have been isolated in the cured resin, one of them being related to the base resin. Finally, a chemiluminescence spectrum has been recorded in the course of curing, which has been related to either curing-related reactions or to an oxidation process.     

Photoluminescence and X-ray Diffraction of Distributed Bragg Reflector

Spectral and structural characteristics of distributed Bragg reflector (DBR) in vertical-cavity surface-emitting lasers were studied with photoluminescence and double- crystal X- ray diffraction measurement. The expected high quality epitaxial DBR structure was verified. In the X- ray double- crystal rocking curves of DBR the zeroth- order peak, the first and second order satellite peaks were measured. Splitting of diffraction peak appeared in the rocking curves was analyzed. The effects of introduced deep energy levels on the structural perfection and optical properties were discussed.     

NH3／H2O2溶液腐蚀下多孔硅光致荧光

用光致荧光谱、傅里叶变换红外光谱（ＦＴＩＲ）和扫描电子显微镜（ＳＥＭ）对用阳极氧化法制成的多孔硅层在１％ＮＨ３／Ｈ２Ｏ２溶液中的腐蚀现象进行了研究。红外分析表明，Ｓｉ－Ｏ键和Ｈ－Ｏ键的强度随ＮＨ３／Ｈ２Ｏ２溶液的腐蚀时间的增加而增加，Ｓｉ－Ｈ键强主匠随腐蚀时间增加而减少。光致荧光谱的峰值在腐蚀开始时先下降后上升，半高宽变窄，谱峰的以边明显蓝移。分析研究表明，１％ＮＨ３／Ｈ２Ｏ２溶液对多孔硅层有腐蚀     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.