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Theoretical investigation on the electronic structure,elastic properties,and intrinsic hardness of Si<sub>2</sub>N<sub>2</sub>O 下载免费PDF全文
According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young’s mod- ulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4. 相似文献
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采用基于密度泛函平面波赝势方法(PWP)方法,计算了六角晶系2H-PbI2晶体的电子结构、力学性质和硬度。采用局域密度近似(LDA)方法计算的晶格常数、带隙、弹性常数与实验值和理论值符合较好。计算表明,2H-PbI2是一种直接带隙的半导体,带隙大约为2。38eV。运用复杂晶体硬度计算公式计算了六角晶系2H-PbI2晶体的硬度,硬度值大约为2. 54 GPa。还发现2H-PbI2晶体的各向异性非常明显。 相似文献
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本研究探讨腹部彩超联合糖类抗原125(CA125)诊断卵巢浆液性肿瘤的价值。选取卵巢浆液性肿瘤患者80例,其中卵巢浆液性囊腺瘤患者23例,浆液性交界性肿瘤患者30例,浆液性癌患者27例,比较各组超声特征及血清CA125差异。浆液性交界性肿瘤、浆液性癌患者囊实性回声、有血流分布、腹水比例明显高于卵巢浆液性囊腺瘤患者(P<0.05),形态规则、边界清晰比例明显低于卵巢浆液性囊腺瘤患者(P<0.05);浆液性癌患者血清CA125为(301.45±104.42)U/mL,明显高于浆液性交界性肿瘤和卵巢浆液性囊腺瘤患者(P<0.05);浆液性交界性肿瘤患者血清CA125为(210.10±98.28)U/mL,明显高于卵巢浆液性囊腺瘤患者(P<0.05);超声联合血清CA125诊断浆液性癌的特异性、准确率和阳性预测值分别为90.57%、87.50%和81.48%,明显高于超声检查(P<0.05)。腹部彩超联合CA125鉴别诊断卵巢浆液性肿瘤有较好的价值。 相似文献
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Mo2C是构建Mxene基器件的重要材料之一,对Mo2C二维材料声子输运的理解非常必要。文章结合第一性原理方法和声子玻尔兹曼输运方程,研究了二维Mo2C材料的晶格热导率。研究表明,室温下二维Mo2C导热系数非常低,其锯齿方向和扶手椅方向的晶格热导率分别为7.20 和 5.04 W/mK。计算了声学振动和光学振动模式对晶格热导率的贡献,揭示总热导率主要由面内声学横波的振动模式所贡献。还进一步计算了声子群速度、声子弛豫时间、三声子散射空间和模式格林艾森参数,发现二维Mo2C中的声子群速度和声子弛豫时间对晶格传输有重要的影响。 相似文献
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Theoretical investigation on the electronic structure,elastic properties, and intrinsic hardness of Si2N20 下载免费PDF全文
According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young’s mod-ulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4. 相似文献
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采用基于密度泛函平面波赝势方法(PWP)方法,计算了六角晶系2H-PbI2晶体的电子结构、力学性质和硬度.采用局域密度近似(LDA)方法计算的晶格常数、带隙、弹性常数与实验值和理论值符合较好.计算表明,2H-PbI2是一种直接带隙的半导体,带隙大约为2.38eV.运用复杂晶体硬度计算公式计算了六角晶系2H-PbI2晶体的硬度,硬度值大约为2.54GPa.还发现2H-PbI2晶体的各向异性非常明显. 相似文献
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Superpixel-Based Complex Field Modulation Using a Digital Micromirror Device for Focusing Light through Scattering Media 下载免费PDF全文
We present a digital micromirror device(DMD) based superpixel method for focusing light through scattering media by modulating the complex field of incident light. Firstly, we numerically and experimentally investigate focusing light through a scattering sample using the superpixel methods with different target complex fields.Then, single-point and multiple-point focusing experiments are performed using this superpixel-based complex modulation method. In our experiment, up to 71.5% relative enhancement is realized. The use of the DMDbased superpixel method for the control of the complex field of incident light opens an avenue to improve the enhancement of focusing light through scattering media. 相似文献
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基于密度泛函理论的广义梯度近似方法研究了中性单点缺陷γ-Si3N4的能量、电子结构和光学性质. N缺陷的结合能和形成能比Si(8)和Si(4)位的都低,显示γ-Si3N4中N缺陷更易形成. 分析了各种缺陷情况下相应的态密度. Si缺陷能形成p型半导体,N缺陷使材料形成间接带隙的n型半导体. Si缺陷情况下,物质有相对大的静态介电常数,在可见光区和红外区,吸收和反射得到显著改善,但是N缺陷却没什么影响. 相似文献