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1.
D. I. Naiduss W. W. Kiesewetter S. L. Dikanskaja J. Schapiro R. Meurice J. Cartiaux E. F. Posorski G. N. Murthy S. Mihaéloff A. D. Rich J. J. Vollertsen Gh. Ghimicescu G. Kotsis C. T. Townsend J. A. Esty F. C. Baselt R. Dubrisay J. Gascon E. R. Scheggia K. M. Renner E. S. Miller C. A. Mitchell A. G. Sossin und S. E. Spektor 《Fresenius' Journal of Analytical Chemistry》1939,118(1-2):48-51
Ohne Zusammenfassung 相似文献
2.
Marco Biroli Silvia Mataloni Michele Matzeu 《NoDEA : Nonlinear Differential Equations and Applications》2005,12(3):295-321
Some stability results for Mountain Pass and Linking type solutions of semilinear problems involving a very general class
of Dirichlet forms are stated. The non linear terms are supposed to have a suitable superlinear growth and the family of Dirichlet
forms is required to be dominated from below and from above by a fixed diffusion type form. Some concrete examples are also
given. 相似文献
3.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献
4.
Chaotic dynamics in open systems produces fractals. This can be seen, for example, in the ionization of an electron from a
hydrogen atom in applied parallel electric and magnetic fields. We summarize some of our recent work on the order that can
be found in these fractals. 相似文献
5.
In this paper we give necessary and sufficient conditions for the existence of a C>
0-semigroup in L
1(I) (I real interval) generated by a second-order differential operator when suitable boundary conditions at the endpoints are imposed. 相似文献
6.
We obtain Dirac’s classic monopole charge quantization from the point of view of geometric quantization and demonstrate how this leads to the conclusion that the electromagnetic field is a U(1)-gauge field. 相似文献
7.
8.
We deal with the problem of determining an inclusion within an electrostatic conductor from boundary measurements. Under mild a priori assumptions we establish optimal stability estimates. Measurements are performed on a portion of the boundary of the conductor. 相似文献
9.