Progress and prospects of the human–robot collaboration

Recent technological advances in hardware design of the robotic platforms enabled the implementation of various control modalities for improved interactions with humans and unstructured environments. An important application area for the integration of robots with such advanced interaction capabilities is human–robot collaboration. This aspect represents high socio-economic impacts and maintains the sense of purpose of the involved people, as the robots do not completely replace the humans from the work process. The research community’s recent surge of interest in this area has been devoted to the implementation of various methodologies to achieve intuitive and seamless human–robot-environment interactions by incorporating the collaborative partners’ superior capabilities, e.g. human’s cognitive and robot’s physical power generation capacity. In fact, the main purpose of this paper is to review the state-of-the-art on intermediate human–robot interfaces (bi-directional), robot control modalities, system stability, benchmarking and relevant use cases, and to extend views on the required future developments in the realm of human–robot collaboration.     

Effect of Power Amplifier Nonlinearity on the Physical Layer Security of MIMO Systems

Wireless Personal Communications - This paper presents an analytical investigation on the effect of nonlinear high-power amplifiers on the physical layer security of multiple-input-multiple-output...     

An Alternative Route Towards Metal–Polymer Hybrid Materials Prepared by Vapor‐Phase Processing

Transition metals incorporated into polymers lead to unusual or improved physical properties that significantly differ from those of purely organic polymers. A simple and practicable incorporation of diverse transition metals into any available polymer would make an important contribution to overcome some of the synthetic difficulties of metal‐polymer hybrid materials. Here, it is demonstrated that atomic layer deposition (ALD) can be a promising means to resolve some of those difficulties. It is found that even polytetrafluoroethylene (PTFE) with its great physical and chemical stability can be easily transformed into a transition metal–PTFE hybrid material simply by applying a metal‐oxide ALD process to PTFE. Upon metal incorporation into the PTFE, the molecular structure as well as mechanical properties (tensile behavior) of PTFE were observed to significantly change. For a better understanding of the changes to the material, experimental investigations using Raman spectroscopy, attenuated‐total‐reflection Fourier‐transform infrared spectroscopy, wide‐angle X‐ray diffraction, and energy‐dispersive X‐ray analysis were performed. In addition, with density functional theory calculations, potential bonding states of the incorporated metal into PTFE were modeled and predicted. The ALD‐based vapor‐phase approach for metal incorporation into a polymer could bring about rapid progress in the research area of metal–polymer hybrid materials.     

Optimal energy-delay tradeoff for opportunistic spectrum access in cognitive radio networks

Cognitive radio (CR) has been considered as a promising technology to enhance spectrum efficiency via opportunistic transmission at link level. Basic CR features allow secondary users (SUs) to transmit only when the licensed channel is not occupied by primary users (PUs). However, waiting for an idle time slot may lead to large packet delays and high energy consumption. We further consider that the SU may decide, at any moment, to use another dedicated way of communication (4G) in order to transmit his packets. Thus, we consider an Opportunistic Spectrum Access (OSA) mechanism that takes into account packet delay and energy consumption. We formulate the OSA problem as a Partially Observable Markov Decision Process (POMDP) by explicitly considering the energy consumption as well as packets’ delay, which are often ignored in existing OSA solutions. Specifically, we consider a POMDP with an average reward criterion. We derive structural properties of the value function and we show the existence of optimal strategies in the class of the threshold strategies. For implementation purposes, we propose online learning mechanisms that estimate the PU activity and determine the appropriate threshold strategy on the fly. In particular, numerical illustrations validate our theoretical findings.     

Complexation of Tolane by Fluorinated Organomercurials—Structures and Luminescence Properties of an Unusual Class of Supramolecular π-Coordination Polymers

The interaction of the Hg(II) derivatives bis(pentafluoro)phenyl mercury (1), (pentafluoro)phenyl mercury chloride (2) and trimeric perfluoro-ortho-phenylene mercury (3) with tolane (diphenylacetylene) in CH₂Cl₂ leads to the formation of [1·tolane], [2 ₂·tolane], and [3·tolane·CH₂Cl₂]. These adducts have been characterized by elemental analysis, X-ray crystallography, and luminescence spectroscopy. In the solid state of these adducts, the tolane molecules interact with the molecules of 1, 2 and 3 via secondary Hg–π interactions and arene–fluoroarene interactions. As a result of an external mercury heavy atom effect, adducts [1·tolane] and [2 ₂·tolane] are phosphorescent at room temperature.     

Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire

The accurate manipulation of strain in silicon nanowires can unveil new fundamental properties and enable novel or enhanced functionalities. To exploit these potentialities, it is essential to overcome major challenges at the fabrication and characterization levels. With this perspective, we have investigated the strain behavior in nanowires fabricated by patterning and etching of 15 nm thick tensile strained silicon (100) membranes. To this end, we have developed a method to excite the "forbidden" transverse-optical (TO) phonons in single tensile strained silicon nanowires using high-resolution polarized Raman spectroscopy. Detecting this phonon is critical for precise analysis of strain in nanoscale systems. The intensity of the measured Raman spectra is analyzed based on three-dimensional field distribution of radial, azimuthal, and linear polarizations focused by a high numerical aperture lens. The effects of sample geometry on the sensitivity of TO measurement are addressed. A significantly higher sensitivity is demonstrated for nanowires as compared to thin layers. In-plane and out-of-plane strain profiles in single nanowires are obtained through the simultaneous probe of local TO and longitudinal-optical (LO) phonons. New insights into strained nanowires mechanical properties are inferred from the measured strain profiles.     

Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer

We provide evidence of nanopatterning-induced bending of an ultrathin tensile strained silicon layer directly on oxide. This strained layer is achieved through the epitaxial growth of silicon on a Si(0.84)Ge(0.16) virtual substrate and subsequent transfer onto a SiO(2)-capped silicon substrate by combining hydrophilic wafer bonding and the ion-cut process. Using high resolution transmission electron microscopy, we found that the upper face of the strained silicon nanostructures fabricated from the obtained heterostructure using electron beam lithography and dry reactive ion etching displays a concave shape. This bending results from the free-surface-induced strain relaxation, which implies lattice out-of-plane expansion near the edges and concomitant contraction at the center. For a ～ 110 nm × 400 nm × 20 nm nanostructure, the bending is associated with an angle of 1.5° between the [Formula: see text] vertical atomic planes at the edges of the ～ 110 nm side. No bending is, however, observed at the strained Si/SiO(2) interface. This phenomenon cannot be explained by the classical Stoney's formula or related formulations developed for nanoscale thin films. Here we employed a continuum mechanical approach to describe these observations using three-dimensional numerical calculations of relaxation-induced lattice displacements.     

2D Antimony–Arsenic Alloys

Alloying in group V 2D materials and heterostructures is an effective degree of freedom to tailor and enhance their physical properties. Up to date, black arsenic‐phosphorus is the only 2D group V alloy that has been experimentally achieved by exfoliation, leaving all other possible alloys in the realm of theoretical predictions. Herein, the existence of an additional alloy consisting of 2D antimony arsenide (2D‐As_xSb_1?x) grown by molecular beam epitaxy on group IV semiconductor substrates and graphene is demonstrated. The atomic mixing of As and Sb in the lattice of the grown 2D layers is confirmed by low‐energy electron diffraction, Raman spectroscopy, and X‐ray photoelectron spectroscopy. The As content in 2D‐As_xSb_1?x is shown to depend linearly on the As₄/Sb₄ deposition rate ratio and As concentrations up to 15 at% are reached. The grown 2D alloys are found to be stable in ambient conditions in a timescale of weeks but to oxidize after longer exposure to air. This study lays the groundwork for a better control of the growth and alloying of group V 2D materials, which is critical to study their basic physical properties and integrate them in novel applications.