Digitally reconstructing Van Gogh's Field with Irises near Arles part 3: Determining the original colors

In earlier articles, we determined the spatial distributions and concentrations of all pigments used by Van Gogh in his painting Field with Irises near Arles. The colors of some pigments are expected to have changed over time, especially those of chrome yellow, cochineal, and eosin lake. For all pigments in this painting, we made physical paint reconstructions by following historical sources on raw materials and production processes, and we determined their optical properties. We combined this with pigment concentration maps to reconstruct the original colors of the painting digitally. When substituting the reconstruction paints into the calculations, we found that technical‐scientific data was not sufficient to resolve several issues. In those cases, discussions within the broad interdisciplinary team allowed us to make informed decisions. These issues refer to the representation of the sky area, and the original contributions of the red lake pigments to local colors. The digitally reconstructed colors of the painting show that due to discoloring of red lake pigments, the irises in the field have changed from a warm purple to purplish blue, and many pink spots in the field have turned to white. The range of yellows in the field has decreased and partly turned to dark brown. The digital reconstruction gives a better understanding of the color scheme used by Van Gogh when compared to remarks the artist made in letters when describing this painting. Also, the original color composition is seen to be aligned with color theories on which Van Gogh based his work.     

Influence of annealing on the optical properties of 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride thin films

Optical constants (refractive index, n, and absorption index, k) of the as-deposited and annealed films of 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) have been obtained in the wavelength range 190–2500 nm by using spectrophotometric measurements. The obtained optical constants were used to estimate the type of transition for the as-deposited and annealed films. We present a single oscillator model that describes the dispersion of refractive index. Drude model of free carriers absorption have been described for the analysis the dispersion of refractive index dispersion before and after annealing.     

Effect of Pre-heat and Inert Gas Species on Cryogenic Aerosol Cleaning Performance in Semiconductor Manufacturing

Cryogenic aerosol cleaning is a dry cleaning method used in the back end of line (BEOL) semiconductor manufacturing to remove defects from planar hydrophobic surfaces such as SiCOH and SiCxNyHz. Cryogenic aerosol cleaning is preferred over conventional wet cleaning methods as it is a non-contact cleaning method, which uses inert gases to generate sub-micrometer-sized solid aerosol particles that physically remove nanometer-sized contaminants on wafer surfaces. Particle removal mechanism involves detachment of the particles upon impact with aerosol, diffusion, and finally entrainment away from the wafer. In BEOL metal line patterning, particles on the dielectric isolation surfaces translate through the subsequent lithography and copper fill steps in to single or multiple metal line open defects that are yield killers. In this study, we show that the particle removal performance of the standard aerosol cleaning can be enhanced by pre-heating the wafer and use of a higher molecular weight inert gas, namely Ar, for aerosol generation. Both the addition of a Pre-heat step and the use of Ar as the aerosol source showed 47–52% reduction in single and multiple line opens detected through wafer electrical tests during high volume semiconductor manufacturing process.     

A novel facile synthesis and characterization of molybdenum nanowires

We describe a straightforward technique to synthesize pure Mo nanowires (NWs) from Mo₆S_yI_z (8,2 <y + z ≤ 10) NWs as precursor templates. The structural transformations occur when Mo₆S_yI_z NWs are annealed in Ar/H₂ mixture leading to the formation of pure Mo NWs with similar structures as initial morphologies. Detailed microscopic characterizations show that large diameters (>15 nm) Mo NWs are highly porous, while small diameters (<7 nm) are made of solid nanocrystalline grains. We find NW of diameter 4 nm can carry up to 30 μA current without suffering structural degradation. Moreover, NWs can be elastically deformed over several cycles without signs of plastic deformation.     

Hiding iris data for authentication of digital images using wavelet theory

This paper introduces an efficient approach to protect the ownership by hiding an iris data into digital image for an authentication purpose. It is based on the theory of wavelets. The idea is to secretly embed biometric data (iris print) in the content of the image identifying the owner. The system is based on an empirical analysis of biometric and watermarking technologies, and it is split into several processes. The first process is based on iris image analysis, which aids the generation of the iris code (watermark); the second and the third processes deal with embedding and detecting a watermark; and the last process deals with the authentication. A new metric that measures the objective quality of the image based on the detected watermark bit is introduced, which does not require the original unmarked image for watermark detection. Simulation results show the effectiveness and efficiency of the proposed approach. The text was submitted by the author in English.     

Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique

Highly dispersive Cu₂ZnSnS₄ (CZTS) nanoparticles were successfully synthesized by a simple solvothermal route. A low cost, non-vacuum method was used to deposit CZTS nanoparticle ink on glass substrates by a doctor blade process followed by selenization in a tube furnace to form Cu₂ZnSn (S,Se)₄ (CZTSSe) layers. Different selenization conditions and particle concentrations were considered in order to improve the crystallinity and surface morphology; the annealing temperature was varied between 400°C and 550°C and the annealing time was varied between 5 min and 20 min in a selenium-nitrogen atmosphere. The influence of annealing conditions on structural, compositional, optical and electrical properties of CZTSSe thin films was studied. An improvement in the structural and surface morphology was observed with increasing of annealing temperature (up to 500°C). An enhancement in the crystallinity and surface morphology were observed for thin films annealed for 10–15 min. Absorption study revealed that the band gap energy of as-deposited CZTS thin film was approximately 1.43 eV, while for CZTSSe thin films it ranged from 1.15 eV to 1.34 eV at different annealing temperatures, and from 1.33 eV to 1.38 eV for different annealing times.