Photo-crosslinking: An Emerging Chemical Tool for Investigating Molecular Networks in Live Cells

Studying protein–protein interactions (PPIs) is useful for understanding cellular functions and mechanisms. Evaluating these PPIs under conditions as similar as possible to native conditions can be achieved using photo-crosslinking methods because of their on-demand ability to generate reactive species in situ by irradiation with UV light. Various fusion tag, metabolic incorporation, and amber codon suppression approaches using various crosslinkers containing aryl azide, benzophenone, and diazirines have been applied in live cells. Mass spectrometry and immunological techniques are used to identify crosslinked proteins based on their capture transient and context-dependent interactions. Herein we discuss various incorporation methods and crosslinkers that have been used for interactome mapping in live cells.     

Effects of carbon nanotubes and interphase properties on the interfacial conductivity and electrical conductivity of polymer nanocomposites

L_c is the minimum length of carbon nanotubes (CNTs) required for efficient transfer of filler conductivity to polymer matrix in polymer CNT nanocomposites (PCNTs). In this work, L_c is correlated with the dimensions of the CNTs and the interphase thickness. Subsequently, the interfacial conductivity as well as the effective length and concentration of CNTs are expressed by CNT and interphase properties. Moreover, a simple model for the tunneling conductivity of PCNTs is developed with these effective terms. The impacts of all parameters on L_c, the interfacial conductivity, the fraction of CNTs in the networks and the conductivity of the PCNT are explained and justified. In addition, the predictions of the percolation threshold and conductivity are compared with the experimental results of several samples. The desirable values of interfacial conductivity are achieved by thin, short and super‐conductive CNTs, high waviness and a thick interphase. However, thin and long CNTs, low waviness, a thick interphase, poor tunneling resistivity due to the polymer matrix and a short tunneling distance advantageously affect the conductivity of PCNTs, because they produce large conductive networks. The predictions also show good agreement with the experimental measurements of percolation threshold and conductivity, which confirms the developed equations. © 2020 Society of Chemical Industry     

Optimization of GMA welding process using the dual response approach

Disturbances and changes in the welding working environment lead to possible variations in the output variables associated with weld quality. In order to enhance weld quality, it is essential to optimize the welding process by taking the variance as well as the average value of the output variables into consideration. In this study, the dual response approach is adopted to determine the welding process parameters, which produce the target value with minimal variance. The dual response approach optimizes the penetration in gas metal arc (GMA) welding through the procedures as follows. First, the regression models of the mean value and standard deviation of the penetration are induced through regression analysis. Subsequently, an optimization algorithm based on the regression models and constraints is applied to determine the welding process parameters, which generate the desired penetration with minimized variance. In particular, the genetic algorithm, a global optimization algorithm, is adopted in this study to determine the optimal solution.     

Size‐Controlled Soft‐Template Synthesis of Carbon Nanodots toward Versatile Photoactive Materials

Size‐controlled soft‐template synthesis of carbon nanodots (CNDs) as novel photoactive materials is reported. The size of the CNDs can be controlled by regulating the amount of an emulsifier. As the size increases, the CNDs exhibit blue‐shifted photoluminescence (PL) or so‐called an inverse PL shift. Using time‐correlated single photon counting, ultraviolet photoelectron spectroscopy, and low‐temperature PL measurements, it is revealed that the CNDs are composed of sp² clusters with certain energy gaps and their oleylamine ligands act as auxochromes to reduce the energy gaps. This insight can provide a plausible explanation on the origin of the inverse PL shift which has been debatable over a past decade. To explore the potential of the CNDs as photoactive materials, several prototypes of CND‐based optoelectronic devices, including multicolored light‐emitting diodes and air‐stable organic solar cells, are demonstrated. This study could shed light on future applications of the CNDs and further expedite the development of other related fields.     

Modelling and optimization of a GMA welding process by genetic algorithm and response surface methodology

The welding process, due to its complexity, has relied on empirical and experimental data to determine its welding conditions. However, trial-and-error methods to determine optimal conditions incur considerable time and cost. In order to overcome these problems, a genetic algorithm and response surface methodology have been suggested for determining optimal welding conditions. First, in a relatively broad region, near-optimal conditions were determined through a genetic algorithm. Then, the optimal conditions for welding were determined over a relatively small region around these near-optimal conditions by using response surface methodology. In order to give different objective function values according to the positive or negative response from the set target value in the optimization problem, a desirability function approach was used. Application of the method proposed in this paper revealed a good result for finding the optimal welding conditions in the gas metal arc (GMA) welding process.     

Reverse‐Conducting IGBT Using MEMS Technology on the Wafer Back Side

In this paper, we present a 600‐V reverse conducting insulated gate bipolar transistor (RC‐IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC‐IGBT uses the deep reactive‐ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC‐IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.