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1.
In this work, we investigated a procedure which exploits microwave ovens to produce SiC- based components by reactive melt infiltration of silicon into graphite preforms. The employed oven is designed to grant optical access to the sample surface, which allows to measure its temperature evolution though a noncontact pyrometer. This signal was used as a feedback to control the power provided to the preform and as an experimental output whose analysis provides insight into the reaction mechanism. Specifically, it is found that complete infiltration is achieved much before the end of the reaction. The latter is not fully self-sustained as the global reaction rate continuously decreases with time until it is no more able to keep the temperature above the silicon solidification value. At that point, the reaction stops. The analysis of the processed samples proved that this procedure allows producing fully infiltrated samples without material failure by adjusting the heat provided during the infiltration stage rather than by tuning the preform structure and composition, which is the usual approach. The proposed method is less time and energy consuming than the standard one.  相似文献   
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The Piracicaba river basin is a subtropical watershed located in the southeastern region of Brazil. With an area of 12 400 km2, the basin is a typical example of new landscape resulting from development in tropical and sub-tropical regions: establishment of intensive industrial and agricultural processes were followed by significant population growth and water management. This scenario has led to significant increase in water demand and decrease in water quality. The main objective of this study is the detection of changes in the patterns of flow and precipitation in the basin, and its possible relation to man-induced changes. Statistical analyses were performed on records of precipitation, evapotranspiration and streamflow, from 1947 to 1991. Precipitation and evapotranspiration totals showed significant increasing trends for the entire basin. From eight streamflow gauge stations, half showed significant decreasing trend. The most probable cause of such trends is the export of water from the basin to the metropolitan region of São Paulo city.  相似文献   
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The newly developed ingot growing techniques, as the three-grain and the columnar multigrain ingot processes, are now offering the possibility of slicing thinner wafers (≤ 100 μm). In this paper we present the results obtained on p type large area (≥ 100 cm2) and 100 μm thick wafers by using both conventional and reverse cell manufacturing technologies.The conventional cells are provided with aluminium or boron BSF plus screen-printed silver mirror or a silver-aluminium net; the reverse cells have a FSF and the deep back junction completely covered by a screen-printed or CVD silver layer.The constructing parameters have been chosen on the base of one and two dimensions modeling and both raw material and devices have been completely characterized.This work shows that very thin wafers do not introduce serious problems for the conventional manufacturing of solar cells. The efficiencies of the normal and of the reverse cells are found to be comparable and are of the same order than those of thicker cells, however at a significant lower cost. The main obtained result has to be related to the demonstration of a cell manufacturing feasibility starting from very thin wafers.  相似文献   
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High second‐order susceptibilities are created by thermal poling in bulk germanium disulfide based chalcogenide glasses. Experimental conditions of the poling treatment (temperature, voltage, time) were optimized for each glass composition. The second‐order nonlinear signals were recorded by using the Maker fringes experiment and a second‐order coefficient χ(2) up to 8 pm V–1 was measured in the Ge25Sb10S65 glass. This value is obtained using a simulation based on accurate knowledge of the thickness of the nonlinear layer. Two mechanisms are proposed to explain the creation of a nonlinear layer under the anode: the formation and the migration of charged defects towards the anode may mainly occur in Ge20Ga5Sb10S65 and Ge25Ga5S70 glasses, whereas the migration of Na+ ions towards the cathode may be responsible for the accumulation of negative charges under the anode in Ge33S67 and Ge25Sb10S65 glasses. Different electronic conductivity behaviors seem to be at the origin of the phenomenon. In parallel, the potential effect of the poling treatment on the structural and electronic properties is studied using Raman spectroscopy and secondary ion mass spectroscopy measurements.  相似文献   
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Two month-old Wistar male albino rats were exposed during a 30-day period to a daily oral intake ad libitum of either 200 microg/mL Cd (as CdCl2), 0.1 microg/mL Se (as Na-selenite), or the same dosages of Cd + Se in drinking water. The daily intake from the water was calculated to be 15 mg Cd/kg and 7 microg Se/kg. Cadmium (Cd) accumulates in the heart (p < 0.005) and, in rats, decreases both body mass growth (p < 0.005) and heart mass (p < 0.02). Selenium (Se) significantly decreases the negative effect of Cd on body mass growth. In the hearts of Cd-treated rats, cadmium caused the decrease (p < 0.05) of selenium-dependent glutathione peroxidase (GSH-Px, EC 1.11.1.9) activity. At the same time, the activities of total superoxide dismutase (total SOD, EC 1.15.1.1), manganese-containing superoxide dismutase (Mn SOD), and copper-zinc-containing superoxide dismutase (CuZn SOD) were increased (p < 0.005). The activities of total SOD, CuZn SOD (p < 0.005), GSH-Px (p < 0.02), and glutathione-S-transferase (GST, p < 0.005) were increased in the hearts of Se-treated rats. However, by concomitant administration of Cd and Se, these changes were diminished (total SOD, GST) or were completely eliminated (Mn SOD, GSH-Px). These results indicate that Se only partly diminishes the effects of Cd cardiotoxicity.  相似文献   
7.
High-computing speed and modularity have made RNS-based arithmetic processors attractive for a long time, especially in signal processing, where additions and multiplications are very frequent. The VLSI technology renewed this interest because RNS-based circuits are becoming more feasible; however, intermodular operations degradate their performance and a great effort results on this topic. In this paper, we deal with the problem of performing the basic operationX(modm), that is the remainder of the integer divisionX/m, for large values of the integerX, following an approximating and correcting approach, which guarantees the correctness of the result. We also define a structure to computeX(modm) by means of few fast VLSI binary multipliers, which is exemplified for 32-bit long numbers, obtaining a total response time lower than 200 nsec. Furthermore, such a structure is evaluated in terms of VLSI complexity and area and time figuresA=?(n 2 T m 2 ) andT=?(T M ) for the parameterT M in \([\log n,\sqrt n ]\) are derived. A simple positional-to-residue converter is finally presented, based on this structure; it improves some complexity results previously obtained by authors.  相似文献   
8.
Neural Computing and Applications - In this paper, we present the novel Deep-MEG approach in which image-based representations of magnetoencephalography (MEG) data are combined with ensemble...  相似文献   
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To overcome the problems relevant to the low processbility and scarce mechanical properties of polyaniline, in a previous work we have proposed the synthesis of elastomeric conducting copolymers prepared by grafting polyaniline (EB) or sulfonated polyaniline (SPAN) chains to the backbone of a carboxylated segmented polyurethane (PEUA). In the present work the physical and chemical‐physical properties of the copolymers are investigated. As evidenced by thermal (DSC) and dynamo‐mechanical (DMTA) characterization, the introduction of EB or SPAN in the matrix enhances the hard‐soft phase segregation effect, because of the strong tendency of the conductive polymer chains to aggregate. Moreover, the EB and SPAN chains, grafted to the polyurethane backbone, acting as reinforcing filler, give rise, compared with the mechanical properties of the insulating matrix, to an increase of the Young modulus and a decrease of the tensile set. When the copolymers are HCl doped their electrical conductivity increases many orders of magnitude, reaching values of about 10?3 Ω?1 cm?1. The conductivity, measured along the deformation direction, may be further increased by stretching the copolymer films. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 1259–1264, 2002  相似文献   
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