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1.
Heat conduction properties in Si nanostructures are analyzed using a Monte Carlo method developed for solving the phonon Boltzmann transport equation. The thermal resistances are evaluated for the systems with various sizes, and the transition from the diffusive to the ballistic heat conduction are investigated. We compare the two different phonon dispersion models (the realistic dispersion relation based on the adiabatic bond charge model and the analytically approximated model), and it is shown that the correct implementation of the phonon dispersion relation is essential to accurately simulate the quasi-ballistic heat conduction properties, which becomes obvious in the structures smaller than the phonon mean free path.  相似文献   
2.
In all experimental mammals tested (rats, dogs, primates), intramuscular injections of the oil-soluble antimalarial artemisinin derivatives artemether and arteether have produced an unusual pattern of selective damage to brain stem centers predominantly involved in auditory processing and vestibular reflexes. Artesunate, the most widely used of these compounds, is a water soluble hemisuccinate derivative given parenterally either by intravenous or intramuscular injection. The neurotoxic potential of parenteral artesunate and artemether was compared in a murine model. Adult Swiss albino mice were assigned randomly to 28-day regimens of intramuscular artemether or artesunate in doses ranging from 30 to 100 mg/kg/day. At 30 mg/kg/day, no abnormalities were detected with either drug. At 50 mg/kg/day, abnormalities were observed in six of 12 artemether recipients and two of 12 artesunate recipients. These were reversible in all but one (artemether) mouse. At 100 mg/kg/day, eight of 36 artemether recipients, two of 36 artesunate recipients, and one of 18 control mice died. All but four surviving mice in the artemether group (86%) showed obvious and usually irreversible abnormalities of balance and equilibrium, whereas only four artesunate recipients (11%) exhibited abnormalities, and these were reversible in each case (P < 0.001). At this dose the relative risk (95% confidence interval) for death or disability was 5.3 (2.6-11.2) for artemether recipients. Intramuscular artemether is significantly more neurotoxic than intramuscular artesunate in this murine model.  相似文献   
3.
We report a case of verapamil-sensitive idiopathic ventricular tachycardia in which a mid-diastolic potential (MDP) 45 msec preceding the Purkinje potential (P potential) was recorded. Pacing during the tachycardia caused concealed entrainment, and the stimulus-QRS interval was equal to the P potential-QRS interval. The interval between the last pacing stimulus and the next P potential (postpacing interval) was longer than the ventricular tachycardia cycle length, but the MDP was orthodromically activated. These findings suggest that the MDP was on the reentrant circuit and the P potential was not on the reentrant circuit, but a bystander.  相似文献   
4.
Transport properties of the two-dimensional hole gas in inversion layer of strained Si/SiGe p-MOSFETs are investigated using the full-band Monte Carlo simulator based on the nonlocal pseudopotential calculation. The hole mobility is significantly enhanced by the strain in the case of Ge content of ≥20%. Moreover, we also present the high-field transport characteristics of 2D holes. In contrast to the low-field mobility, the hole saturation velocity does not significantly enhanced by the strain.  相似文献   
5.
The retrograde atrial potential at a successful ablation site is usually obscured by the wide and large ventricular potential during atrioventricular reentrant tachycardia or ventricular pacing, which makes it difficult to determine the appropriate ablation site for a concealed accessory pathway. A pacing maneuver named the "simultaneous pacing method" is proposed herein to differentiate the retrograde atrial potential from the ventricular potential for a successful ablation of the concealed accessory pathway. Catheter ablation was performed in 12 patients with a single left free-wall concealed accessory pathway. The atrial insertion site was determined by the simultaneous pacing method in six patients (group I) and by ventricular pacing in six patients (group II). In the simultaneous pacing method, electrograms recorded during ventricular pacing in the earliest retrograde atrial activation site are a fusion of the ventricular potential and the following retrograde atrial potential. When atrial and ventricular pacings are performed simultaneously (simultaneous pacing), the end portion of the electrograms recorded at the same site is solely the ventricular component, because atrial is activated earlier. The atrial potential can be confirmed during ventricular pacing in comparison with the electrograms during the "simultaneous pacing." Radiofrequency catheter ablation was successful in eliminating conduction through the accessory pathway in all 12 patients. The radiofrequency applications in group I were significantly fewer than those in group II (1.7 +/- 1.0 in group I, 5.3 +/- 3.2 in group II, P < 0.05). The total procedure time in group I was significantly shorter than in group II (57.8 +/- 15.7 vs 106.7 +/- 41.6 mins in group II, respectively, P < 0.05). The fluoroscopy time in group I was significantly shorter than in group II (54.0 +/- 7.9 vs 81.3 +/- 26.3 mins, respectively, P < 0.05). We were able to determine the atrial insertion site of accessory pathways by the simultaneous pacing method. The simultaneous pacing method was useful in eliminating concealed left free-wall accessory pathways.  相似文献   
6.
We report the two- and three-dimensional quantum lattice-gas automata simulation for one-particle electronic wave propagation in nanostructures. The transmission coefficient of the electronic wave through the two-dimensional quantum point contact is investigated taking account of the surface roughness of the confinement wall. It is demonstrated that the electron transmission is significantly affected by the surface roughness pattern even if the same roughness parameter is assumed. We also perform the three-dimensional simulation, and the wave propagation in the structure like an ultrathin-body MOSFET is visualized.  相似文献   
7.
8.
In order to examine the efficacy of the combination chemotherapy with miconazole and G-CSF, patients with deep mycosis and suspected deep mycosis were divided into 3 groups. Group I: miconazole and G-CSF were administered simultaneously. Group II: miconazole was administered later during G-CSF administration. Group III: only miconazole was administered. Of a total of 117 cases 105 cases were analyzed including group I 37 cases, group II 39 cases and group III 29 cases, excluding 12 dropout and inadequate cases. Of the 105 cases, deep mycosis were 31 and suspected deep mycosis were 74, and underlying diseases were hematological malignancies such as leukemias. Efficacy judged mainly by the change of fever was 62.2% (23/37) in group I, 43.6% (17/39) in group II, and 41.4% (12/29) in group III, respectively. Efficacy was better in the patients whose neutrophil counts increased from less than 500/microliters to more than 500/microliters (group I 75.0%, group II 72.7%) than in the patients whose neutrophil counts were less than 500/microliters throughout the time of miconazole administration (group I 33.3%, group II 33.3%). Adverse effects were minimal in 3 groups (group I 15.4%, group II 17.4%, group III 15.6%). It is concluded that the combination with miconazole and G-CSF is effective in the treatment of deep fungal infections.  相似文献   
9.
We report the calculation of gate leakage currents through the ultra-thin gate oxides (2.6–3.4 nm) in MOSFETs. We simulate J-V characteristics for the direct tunneling of valence electrons and inversion layer holes, which are measured using a charge separation technique. A two-band model is employed to express the complex band structure of the gate oxide, and its validity is discussed by calculating the complex band structure of -cristobalite based on the second nearest neighbor sp 3 s* tight-binding scheme.  相似文献   
10.
Soft breakdown properties of thin gate oxide films are investigated using a constant current stress measurement. The soft breakdown can be classified into two different modes from the current conduction characteristics of post breakdown oxides: one of the modes shows a telegraph switching pattern and the other random noise. The generation probabilities of two soft breakdown modes and hard breakdown strongly depend on the stress current. Time-to-breakdown is well characterized by a universal function of stress conditions regardless of the breakdown modes. These experimental findings imply that all types of breakdown originate from the same precursor and the magnitude of the following local heating due to the transient current in a conductive micro spot determines the charge conduction properties after a breakdown event  相似文献   
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