Optimal Water Allocation of Surface and Ground Water Resources Under Climate Change with WEAP and IWOA Modeling

Water Resources Management - The water evaluation and planning (WEAP) approach and the invasive weed optimization algorithm (IWOA) are herein employed to determine the optimal operating policies in...     

Carbon nanotubes: properties,synthesis, purification,and medical applications

Current discoveries of different forms of carbon nanostructures have motivated research on their applications in various fields. They hold promise for applications in medicine, gene, and drug delivery areas. Many different production methods for carbon nanotubes (CNTs) have been introduced; functionalization, filling, doping, and chemical modification have been achieved, and characterization, separation, and manipulation of individual CNTs are now possible. Parameters such as structure, surface area, surface charge, size distribution, surface chemistry, and agglomeration state as well as purity of the samples have considerable impact on the reactivity of carbon nanotubes. Otherwise, the strength and flexibility of carbon nanotubes make them of potential use in controlling other nanoscale structures, which suggests they will have a significant role in nanotechnology engineering.     

Recent Advances in CNT-based FET Transistor Biosensors to Detect Biomarkers of Clinical Significance

Silicon - The development of advanced materials has attracted interest for promising novel applications in biosensing and realm of nanophotonics. This interest in nanoelectronics, and...     

Application of Bayesian Decision Networks for Groundwater Resources Management Under the Conditions of High Uncertainty and Data Scarcity

This paper presents management of groundwater resource using a Bayesian Decision Network (BDN). The Kordkooy region in North East of Iran has been selected as study area. The region has been sub-divided into three zones based on transmissivity (T) and electrical conductivity (EC) values. The BDN parameters: prior probabilities and Conditional Probability Tables - CPTs) have been identified for each of the three zones. Three groups of management scenarios have been developed based on the two decision variables including “Crop pattern” and “Domestic water demand” across the three zones of the study area: 1) status quo management for all three zones represent current conditions; 2) the effect of change in cropping pattern on management endpoints and 3) the effect of future increased domestic water demand on management endpoints. The outcomes arising from implementing each scenario have been predicted by use of the constructed BDN for each of the zones. Results reveal that probability of drawdown in groundwater levels of southern areas is relatively high compared with other zones. Groundwater withdrawal from northern and northwestern areas of the study area should be limited due to the groundwater quality problems associated with shallow groundwater of these two zones. The ability of the Bayesian Decision Network to take into account key uncertainties in natural resources and perform meaningful analysis in cases where there is not a vast amount of information and observed data available – and opportunities for enabling inputs for the analysis based partly on expert elicitation,emphasizes key advantages of this approach for groundwater management and addressing the groundwater related problems in a data-scarce area.     

Polarization effects in nitride semiconductors and device structures

Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. Moreover, this material system with its favorable hetero-junctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approach the predicted values, this material system would also be very attractive for power switching devices. In addition to the premature breakdown, high concentration of defects, and inhomogeneities, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, following a succinct review of the progress that has been made, spontaneous and piezoelectric polarization effects and their impact on sample device-like hetero-structures will be treated. Received: 5 April 1999 / Reviewed and accepted: 19 April 1999     

Characterization of GaN and In x Ga1−x N films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

Structural and optical studies have been performed on GaN, InGaN layers, In_0.08Ga_0.92N/GaN heterostructures, In_0.08Ga_0.92N/In_0.02Ga_0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam epitaxy (MBE) on GaN templates by using transmission electron microscopy (TEM), X-ray diffraction (XRD), and photoluminescence (PL). The layers are found to be high quality with low defect density, on the order of 10⁶ cm^?2, which are mainly related to the threading dislocations originating/propagating from the hydride vapor phase epitaxy (HVPE) GaN template. The interface between the layers and substrate could not be detected by TEM and was therefore deemed to be of high quality. Convergent beam electron diffraction studies revealed that the polarity of the films is Ga-polarity, which is the same as that of the substrate. A dual structure with different compositions and having thicknesses of 10 and 25 nm was observed in InGaN layers grown on GaN in one of the heterostructure samples. The full width at half maximum (FWHM) of the XRD rocking curves of (0 0 0 2) for heterostructures and quantum wells were found to be in the range of 15–28 arcmin for a slit width of 2 mm. PL studies on GaN layers grown by MBE and MOCVD on GaN templates are reasonably similar. The PL spectra from all the MBE and MOCVD epilayers and the substrate contain a plethora of sharp peaks related to excitonic transitions. With the presence of donor-bound exciton peaks and their associated two-electron satellites, the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively, were determined. PL measurements revealed that the FWHM of the main donor bound exciton peak increased from 0.6 to 2.9 meV but no change in peak position (3.472 eV) was observed in GaN when doping with Si (5×10¹⁷ cm^?3). However, the intensities of the yellow band and the shallow donor–acceptor pair band increased 10 times as compared to that in the undoped GaN samples. In the case of InGaN/GaN heterostructures, a similar trend was observed when compared to the doped samples. In the multiquantum well In_0.08Ga_0.92N/In_0.02Ga_0.98N heterostructures, the activation energy of the exciton emission, found to be 18 meV, was the lowest in the samples studied. The peak at 3.02 eV related to the InGaN was strongly pronounced in the In_0.08Ga_0.92N/In_0.02Ga_0.98N multiquantum well structure. In the In_0.08Ga_0.92N/In_0.02Ga_0.98N quantum well structures, the change in peak position with variation of temperature from 15 to 300 K in PL spectra is “S”-shaped. The cause for the “S” shape, i.e., a red–blue–red shift, is discussed.     

Thermal conductivity of bulk ZnO after different thermal treatments

Thermal conductivities (κ) of melt-grown bulk ZnO samples thermally treated under different conditions were measured using scanning thermal microscopy. Samples annealed in air at 1050°C for 3 h and treated with N-plasma at 750°C for 1 min. exhibited κ=1.35±0.08 W/cm-K and κ=1.47±0.08 W/cm-K, respectively. These are the highest values reported for ZnO. Atomic force microscopy (AFM) and conductive-AFM measurements revealed that surface carrier concentration as well as surface morphology affected the thermal conductivity.     

High-κ dielectrics and advanced channel concepts for Si MOSFET

With scaling of the gate length downward to increase speed and density, the gate dielectric thickness must also be reduced. However, this practice which has been in effect for many decades has reached a fundamental limitation because gate dielectric thicknesses in the range of tunneling have been reached with the SiO₂ dielectric layer for MOSFETs. Consequently, the gate dielectrics with higher dielectric constants, dubbed the “high-κ”, which allow scaling with much larger thicknesses have become active research and development topics. In this review technological issues associated with the likely high-κ materials which are under consideration as well as challenges, and solution to them, they bring about in the fabrication of Si MOSFET are discussed. Moreover, in order to squeeze more speed out of CMOS, channels for both n- and p-type MOSFET enhanced with appropriate strain and the concepts behind them are discussed succinctly. Finally, the longer term approach of replacing Si with other channel materials such as GaAs (InGaAs) for n-channel and Ge for p-channel along with technological developments of their preparation on Si and likely gate oxide developments are treated in some detail.