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Multimedia Tools and Applications - Methods based on locally encoded image features have recently become popular for texture classification tasks, particularly in the existence of large intra-class...  相似文献   
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Rewari  Sonam  Nath  Vandana  Haldar  Subhasis  Deswal  S. S.  Gupta  R. S. 《Microsystem Technologies》2019,25(5):1537-1546
Microsystem Technologies - In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain...  相似文献   
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Cationic surfactant cetyltrimethylammonium bromide (CTAB) and cetylpyridinium bromide (CPB) bind to the calf thymus DNA (ct‐DNA) like anionic biopolymers electrostatically, and establish equilibrium in aqueous medium at pH 7. At low concentration, ct‐DNA does not interact with anionic surfactants, sodium dodecylsulfate (SDS) and sodium dodecylbenzylsulfonate (SDBS). However, in the ground state, anionic surfactant is found to clearly establish equilibrium with ct‐DNA‐bound cationic surfactant whereby the same surfactant–DNA isosbestic point reappears. We herein report a detail ratiometric binding of CPB with ct‐DNA, and interaction of anionic SDBS with DNA‐bound CPB in comparison with the combined ct‐DNA–CTAB–SDS system. Compaction of ct‐DNA in presence of CPB and its decompaction using anionic SDBS is also studied in comparison with CTAB–SDS combination. The techniques used are tensiometry, spectrophotometry, viscometry, cyclic voltammetry, circular dichroism, isothermal titration calorimetry, and density functional theory (DFT)‐based computational calculations. The size and surface charge density of the surfactant headgroups and the phosphate group in DNA have a contributing role in the DNA compaction–decompaction phenomenon.  相似文献   
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The structural and morphological characterizations of a chalcopyrite concentrate, collected from the Indian Copper Complex, Ghatshila, India, were carried out by X-ray diffraction, scanning electron mi...  相似文献   
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Three-dimensional (3D) YBO3:Tb3+ flower-like and dense flower-like hierarchitecture constituted of nanoflakes are solvothermally synthesized in the presence of polyborate precursors in the mixture of ethanol and water. The growth process of the YBO3:Tb3+ flowers and dense flowers was explored based on the time-dependent experiment and the results showed that the growth mechanism follows an in situ growth rather than self-assembly process as reported previously. YBO3:Tb3+ morphologies composed of nanoflakes are achieved by controlling the concentration of ethanol and dependence of photoluminescence on morphology was studied. Remarkable photoluminescence enhancement was observed for YBO3:Tb3+ with flower-like morphology demonstrating the potential of the microstructure in future applications as a green phosphor. Such a synthetic method and growth mechanism may be applied to fabricate complex 3D architectures of other materials.  相似文献   
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Russian Journal of Nondestructive Testing - Nitrile rubbers, also known as Nitrile-Butadiene rubbers, belong to the category of synthetic rubbers and are a better choice as materials for...  相似文献   
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Wireless Personal Communications - In this paper a combination of rectangular and elliptical fractal geometry is applied on a regular hexagonal wide slot antenna fabricated using a FR4 substrate to...  相似文献   
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In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported,to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions.This novel structure offers low barrier height at the source and offers high ON-state current.The ION/IoFF of ISE-CGAA-SB-MOS-FET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade).However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate,dual metal gate,single metal gate with ISE,and dual metal gate with ISE has been presented.The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design.The numerical simulation is performed using the ATLAS-3D device simulator.  相似文献   
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