Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Nitride-based flip-chip ITO LEDs

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.     

Permissive Modulation of Sphingosine-1-Phosphate-Enhanced Intracellular Calcium on BKCa Channel of Chromaffin Cells

Sphingosine-1-phosphate (S1P), is a signaling sphingolipid which acts as a bioactive lipid mediator. We assessed whether S1P had multiplex effects in regulating the large-conductance Ca²⁺-activated K⁺ channel (BK_Ca) in catecholamine-secreting chromaffin cells. Using multiple patch-clamp modes, Ca²⁺ imaging, and computational modeling, we evaluated the effects of S1P on the Ca²⁺-activated K⁺ currents (I_K(Ca)) in bovine adrenal chromaffin cells and in a pheochromocytoma cell line (PC12). In outside-out patches, the open probability of BK_Ca channel was reduced with a mean-closed time increment, but without a conductance change in response to a low-concentration S1P (1 µM). The intracellular Ca²⁺ concentration (Ca_i) was elevated in response to a high-dose (10 µM) but not low-dose of S1P. The single-channel activity of BK_Ca was also enhanced by S1P (10 µM) in the cell-attached recording of chromaffin cells. In the whole-cell voltage-clamp, a low-dose S1P (1 µM) suppressed I_K(Ca), whereas a high-dose S1P (10 µM) produced a biphasic response in the amplitude of I_K(Ca), i.e., an initial decrease followed by a sustained increase. The S1P-induced I_K(Ca) enhancement was abolished by BAPTA. Current-clamp studies showed that S1P (1 µM) increased the action potential (AP) firing. Simulation data revealed that the decreased BK_Ca conductance leads to increased AP firings in a modeling chromaffin cell. Over a similar dosage range, S1P (1 µM) inhibited I_K(Ca) and the permissive role of S1P on the BK_Ca activity was also effectively observed in the PC12 cell system. The S1P-mediated I_K(Ca) stimulation may result from the elevated Ca_i, whereas the inhibition of BK_Ca activity by S1P appears to be direct. By the differentiated tailoring BK_Ca channel function, S1P can modulate stimulus-secretion coupling in chromaffin cells.     

Nitride-based high power flip-chip near-UV leds with reflective submount

Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs     

Nitride-Based Schottky Barrier Sensor Module With High Electrostatic Discharge Reliability

In this study, we proposed and realized a nitride-based Schottky barrier sensor module with high electrostatic discharge (ESD) reliability. By including a Si-based ESD protection chip into the module, we can significantly enhance endurable ESD voltages under both forward and reverse human-body-mode (HBM) ESD stresses. It was found that the fabricated module can endure reverse HBM ESD stress of 7.5 KV and forward HBM ESD stress larger than 8 KV. It was also found that the inclusion of the Si-based ESD protection chip will not result in a decrease in detector responsivity     

Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate

A nitride-based high-power flip-chip (FC) light-emitting diode (LED) with a double-side patterned sapphire substrate (PSS) was proposed and realized. Under 350-mA current injection, it was found that forward voltages were 3.24, 3.26, and 3.25 V for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. It was found that the 350-mA LED output powers were 79.3, 98.1, and 121.5 mW for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. In other words, we can enhance the electroluminescence intensity by 53% without increasing operation voltage of the fabricated LED     

Highly Reliable High-Brightness GaN-Based Flip Chip LEDs

The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studied. It was found that 300degC rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.