Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

Three-dimensional motion of the upper cervical spine in rheumatoid arthritis

Rheumatoid arthritis frequently contributes to instability of the upper cervical spine. Rotational instability of the upper cervical spine was evaluated in rheumatoid arthritis patients using biplanar x-ray photogrammetry. Three-dimensional cervical motion and the instantaneous axis of rotation of the atlas relative to the axis were evaluated in normal and rheumatoid arthritis patients during axial rotation in the horizontal plane. Anterior atlantoaxial subluxation did not increase during axial head rotation in either the atlantoaxial subluxation or the vertical subluxation groups, while the instantaneous axes of rotation were distributed posteriorly in the dens in the RA-normal group, but were widely scattered in the atlantoaxial subluxation group.     

A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

A new fabrication technology for AlGaAs/GaAs HEMT LSIs using InGaAsnonalloyed ohmic contacts

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L _g=0.9 μm). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5×21.5 μm², one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size     

Ultrahigh-speed HEMT LSI technology for supercomputer

The current status of high electron mobility transistor (HEMT) technology at Fujitsu for high-performance VLSI is presented, focusing on device performance in the submicrometer dimensional range and the HEMT LSIs implemented in supercomputer systems. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. A 1.1 K-gate bus-driver logic LSI has been developed to demonstrate the high-speed data transfer in a high-speed parallel processing system at room temperature, operating at 10.92 GFLOPS. A cryogenic 3.3 K-gate random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate the high-clock-rate system operations at liquid-nitrogen temperature. For VLSI level complexity, a HEMT 64-kb static RAM with 1.2-ns access operation and a 45 K-gate gate array with 35-ps logic delay have been developed operating at room temperature, demonstrating the high performance required for future high-speed computer systems     

Accelerator Analysis of Tributyltin Adsorbed onto the Surface of a Tributyltin Resistant Marine Pseudoalteromonas sp. Cell

Tributyltin (TBT) released into seawater from ship hulls is a stable marine pollutant and obviously remains in marine environments. We isolated a TBT resistant marine Pseudoalteromonas sp. TBT1 from sediment of a ship’s ballast water. The isolate (10^{9.3 ± 0.2} colony-forming units mL⁻¹) adsorbed TBT in proportion to the concentrations of TBTCl externally added up to 3 mM, where the number of TBT adsorbed by a single cell was estimated to be 10^8.2. The value was reduced to about one-fifth when the lysozyme-treated cells were used. The surface of ethanol treated cells became rough, but the capacity of TBT adsorption was the same as that for native cells. These results indicate that the function of the cell surface, rather than that structure, plays an important role to the adsorption of TBT. The adsorption state of TBT seems to be multi-layer when the number of more than 10^6.8 TBT molecules is adsorbed by a single cell.     

Characteristics of epoxy resin cured with in situ polymerized curing agent

In order to improve the heat resistance of a cured epoxy resin together with reducing the viscosity of the resin composition, an epoxy resin was cured with a curing agent formed from the radical copolymerization of vinyl monomers during the cure process of the epoxy resin. N-phenylmaleimide and p-acetoxystyrene were used as vinyl monomers of the curing agent. The epoxy resin was cured by the insertion reaction of the ester group of the in situ polymerized curing agent and the epoxy group of the epoxy resin. In the cure system of the epoxy and the phenol resins, reduction of the viscosity of the resin composition was achieved by replacing some or all of the phenol resin with these monomers. When all phenol resins were replaced by these monomers, the viscosity of resin composition (0.01 Pa s at 70 °C) decreased by about 1/2000 compared with that of the system with only phenol resin (21 Pa s at 70 °C). The glass transition temperature (T_g) of the cured resin with no phenols was 174 °C, an improvement of 17 °C compared with that of the system cured with only phenol resin. The flexural strength of the new resins remained unchanged.     

New amphoteric surfactants containing a phosphoric acid group: I. syntheses and physicochemical properties of sodium 2-(n-2-hydroxyalkyl-n-methylamino)ethyl hydrogen phosphate

A series of new amphoteric surfactants having a phosphoric acid group, a tertiary amino group and a 2-hydroxyalkyl group, sodium 2-(N-2-hydroxyalkyl-N-methyl-amino)ethyl hydrogen phosphates (alkyl: n-tetradecyl, n-hexadecyl, n-octadecyl), were prepared by an addition reaction of 1,2-epoxyalkanes to N-methylaminoethanol, followed by the introduction of a phosphoric acid group and neutralization with sodium hydroxide. The structures of these compounds were confirmed by spectroscopy and elemental analysis. The solubility in solvents, Krafft point, surface tension, critical micelle concentration (CMC), occupation area of the molecule at the surface of aqueous solutions and foaming power were measured. It was shown that a 2-hydroxyethyl group in a long alkyl chain seemed to behave as a hydrophobic part.     

1-O-alkyl-2,3-diacylglycerols in the skin surface lipids of the hairless mouse

A neutral lipid class was isolated by thin-layer chromatography from the skin surface lipids of the hairless mouse. The fraction migrated faster than triglycerides and had a migration rate similar to that of diacyl alkanediols (diester wax). Upon deacylation, however, the long-chain diols were identified as 1-alkylglycerol ethers based on their chromatographic properties and on the mass spectra of their nicotinylidene derivatives. Thus, the skin lipid fraction was identified as 1-O-alkyl-diacylglycerol. The alkyl moieties were all saturated and even-numbered and ranged in chainlength from C₁₆ to C₂₂ with 1-O-hexadecylglycerol amounting to 34% of the total glycerol ether moieties. The fatty acids derived from this lipid fraction were mostly monoenoic with chainlengths ranging from C₁₆ to C₂₄. The major acyl component was eicosenoic acid (20∶1) representing 61% of the total fatty acids.     

Biased distribution of the branched-chain fatty acids in ceramides of vernix caseosa

The compositions of ester- and amide-linked fatty acids from ceramides of human vernix caseosa were described with emphasis on the distribution of the branched-chain fatty acid (BCFA). Two novel ceramides were isolated from vernix caseosa in the course of this study: the acylated type of esterified α-OH-hydroxyacid/sphingosine ceramide (Cer[EAS]) and nonacylated type of non-OH fatty acid/hydroxysphingosine ceramide (Cer[NH]). Their chemical structures were identified by nuclear magnetic resonance and chemical procedure. The Cer[EAS] was an acylceramide and consisted of the highest concentrations of ester- and amide-linked BCFA (62 and 67%, respectively). The iso- or anteiso-branching structures of the aliphatic chains were confirmed by the mass spectra of their picolinyl or pyrrolidide derivatives. As a whole, amide-linked fatty acids of ceramides 1–7 and Cer[NH] were normal types of straight-chain fatty acids with or without α- or ω-hydroxylation. The BCFA concentrations of amide-linked fatty acids in these ceramides (ceramides 1–7 and Cer[NH]) were low and less than 10%. The BCFA thus occurred exclusively in a novel acylceramide of Cer[EAS] in the vernix caseosa.